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Manufacturing method of high power LED chip

An LED chip and manufacturing method technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problem of low luminous brightness of array chips, and achieve the effects of improving luminous brightness, obvious effect and high luminous intensity

Active Publication Date: 2014-03-19
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for improving the luminous brightness of high-power array LED chips, so as to solve the technical problem of low luminous brightness of existing array chips

Method used

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  • Manufacturing method of high power LED chip
  • Manufacturing method of high power LED chip

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Thoroughly clean the epitaxial wafer, which is an epitaxial wafer with a GaN-based light-emitting diode chip structure grown on a PSS sapphire substrate;

[0032] 2. Through the steps of yellow photolithography, inductively coupled plasma (ICP) etching, de-glue cleaning, etc., the light-emitting area mesa of all the chip units contained in a single core particle is manufactured, and the N-type GaN layer 2 is exposed, and the trench forms an isolation channel 10. Make the trench as narrow as possible (isolated channel 10) by yellow photolithography, and the number of multiple quantum well layers etched away becomes less, reducing the area of ​​P-type GaN, increasing the light-emitting area and improving the brightness;

[0033] 3. After cleaning, use plasma enhanced chemical vapor deposition (PECVD) to deposit the current blocking layer 5, the material of the current blocking layer is Si 2 N 2 O, and go through the steps of photolithography, wet etching, de-glue cleaning, e...

Embodiment 2

[0042] 1. Thoroughly clean the epitaxial wafer, which is an epitaxial wafer with a GaN-based light-emitting diode chip structure grown on a PSS sapphire substrate;

[0043] 2. After cleaning, use plasma-enhanced chemical vapor deposition (PECVD) to deposit the current blocking layer 5, the material of the current blocking layer is SiN, and after the steps of photolithography, wet etching, and de-glue cleaning, it can be used to lay P-type electrode lines 7 and the positions of the P-type pad 71 are both covered with the current blocking layer 5;

[0044] 3. The transparent conductive layer 6 is deposited. The material of the transparent conductive layer 6 is nickel gold (NiAu), and the etching method is wet etching; the deposition method is electron beam evaporation deposition;

[0045] 4. Remove the conductive material in the area of ​​the N-type electrode line, N-type pad, and P-type pad through steps such as yellow photolithography and wet etching;

[0046] 5. Then use yellow photo...

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Abstract

The invention provides a manufacturing method of a high power LED chip. The method comprises the steps of depositing a current blocking layer at the surface of an epitaxial wafer, depositing a transparent conductive layer, removing foreign matters, high-temperature annealing, making a pad and an electrode wire, and secondary high-temperature annealing. A step of processing a light emitting area table to expose an N type GaN layer and form an isolation channel is carried out before the step of depositing the current blocking layer or between the step of removing foreign matters and the step of high-temperature annealing. The step of making the pad and the electrode wire is making a P type electrode pad, an N type electrode pad, a P type electrode wire and an N type electrode wire through the modes of negative photoresist lithography, glue sweeping, deposition, separation and the like. The P type electrode wire is only distributed on a P type Gan layer surface and above the transparent conductive layer. According to the manufacturing method of the high power LED chip, a structure that the isolation channel and the P type Gan layer surface are occupied by the P type electrode wire at the same time is abandoned, the P type electrode wire is arranged at a core particle surface, the isolation channel is narrowed and the width is reduced to one third of the original width, the light emitting surface is increased, and the light emitting brightness is greatly raised.

Description

Technical field [0001] The present invention relates to the field of LED device production, in particular, to a manufacturing method for improving the brightness of high-power array LED chips. Background technique [0002] With the vigorous development of the third-generation semiconductor technology, semiconductor lighting has become the focus of social development with its advantages of energy saving, environmental protection, high brightness, and long life. It has also driven the ascendant of the entire industry. GaN-based LED chips are the "power" of semiconductor lighting. In recent years, their performance has been greatly improved, and production costs have been continuously reduced, making outstanding contributions to the entry of semiconductor lighting into thousands of households. [0003] In semiconductor lighting technology, the manufacture of GaN-based blue LED chips and the excitation of phosphors by blue LEDs after packaging to obtain white light are the core lightin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38H01L33/00
CPCH01L33/38H01L2933/0016
Inventor 田艳红许顺成汪延明
Owner XIANGNENG HUALEI OPTOELECTRONICS