Vertical structure of anisotropic magnetoresistive sensor and its manufacturing method

Abstract

The present invention provides a vertical structure of an anisotropic magnetoresistive sensor and its manufacturing method, the structure comprising: a semiconductor substrate; a first insulating layer covering the semiconductor substrate; a magnetoresistive metal strip located on the first insulating layer The contact metal layer is located on the magnetoresistance metal strip; the magnetoresistance metal short circuit bar is located on the contact metal layer; the second insulating layer covers the magnetoresistance metal short circuit bar, the magnetoresistance metal strip and the first insulating layer, and The second insulating layer has a through hole above the magnetoresistive metal shorting bar; the set-reset metal wiring layer is located on the second insulating layer and contacts the magnetoresistive metal shorting bar through the through hole; the third insulating layer, Covering the set-reset metal wiring layer and the second insulating layer. The anisotropic magnetoresistive sensor of the present invention has a simple structure, and its forming method has a good match with the microelectronic technology, is suitable for mass industrial production, is beneficial to improving product reliability, and has wide applicability.

Description

technical field [0001] The invention relates to the technical field of magnetic sensors, in particular to a vertical structure of an anisotropic magnetoresistive sensor and a manufacturing method thereof. Background technique [0002] Anisotropic magnetoresistive (AMR) sensor is a new type of magnetoresistance effect sensor in modern industry, which is becoming increasingly important, especially parking sensor, angle sensor, automatic braking system ( ABS) sensors and tire pressure sensors are widely used. [0003] In addition to anisotropic magnetoresistive (AMR) sensors, magnetic sensors in the prior art also include Hall sensors, giant magnetic sensors (GMR), tunnel junction magnetic sensors (TMR), etc. The sensitivity of the sensor is much higher, and the technology is more mature than the GMR sensor and the TMR sensor, so the application of the anisotropic magnetoresistive (AMR) sensor is more extensive than that of other magnetic sensors. [0004] The formation proce...

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Problems solved by technology

[0004] The formation process of the AMR sensor in the prior art requires more manufacturing steps, and it is difficult to be monolithically integrated by the microelectronic processing technology, which makes the processing cost of the AMR sensor system relatively expensive

Although many research institutes and schools are currently conducting research on the magnetic material layer of AMR sensors, there is no systematic device structure and manufacturing method.

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