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Out-of-plane spacer defined electrode

A technology of out-of-plane electrodes and electrodes, which is applied in the field of wafers and substrates, and can solve problems such as easy damage of out-of-plane electrodes, complex MEMS resonators, and underutilization

Active Publication Date: 2014-03-19
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Typically, out-of-plane electrodes are underutilized due to difficulties in reliably fabricating such devices
For example, encapsulation is difficult for out-of-plane devices because out-of-plane electrodes are easily damaged during encapsulation
MEMS resonators that include out-of-plane electrodes are especially complex because such devices require a vacuum packaging process

Method used

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  • Out-of-plane spacer defined electrode
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  • Out-of-plane spacer defined electrode

Examples

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Embodiment Construction

[0046] To promote an understanding of the principles of the invention, reference will now be made to the embodiments illustrated in the drawings and described in the following written description. It should be understood that no limitation of the scope of the invention is thereby intended. It is also to be understood that the invention includes any changes and modifications to the described embodiments, and includes additional applications of the principles of the invention which would normally occur to one skilled in the art to which the invention pertains.

[0047] figure 1 A pressure sensor 100 including a handle layer 102 , a buried oxide layer 104 and a device layer 106 is shown. Oxide layer 108 separates device layer 106 from capping layer 110 . A passivation layer 112 is located on the cover layer 110 .

[0048] Within the device layer 106 , an in-plane electrode 114 is defined by two etched portions 116 , 118 . The in-plane electrode 114 is isolated from the cappin...

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PUM

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Abstract

In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

Description

[0001] This application claims priority to US Provisional Application No. 61 / 475,461, filed April 14, 2011. technical field [0002] The present invention relates to wafers and substrates such as are used in microelectromechanical systems (MEMS) devices or semiconductor devices. Background technique [0003] Electrostatic MEMS resonators have become promising technology candidates to replace traditional quartz crystal resonators due to their potential for smaller size, lower power consumption, and low-cost silicon fabrication. However, such devices are usually subject to unacceptably large dynamic impedance (R x )Impact. MEMS devices operating in an out-of-plane direction (ie, a direction perpendicular to the plane defined by the substrate on which the device is formed) have the advantage of having large switching areas on the upper and lower surfaces, thereby reducing dynamic impedance. Consequently, out-of-plane devices have received increasing attention, resulting in si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00301B81B2207/095B81B3/0021B81B2203/0127B81C1/00158B81C1/00
Inventor A·B·格雷厄姆G·亚马G·奥布莱恩
Owner ROBERT BOSCH GMBH