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Direct sensing biofets and fabrication methods

A biosensor, effect technology, applied in the field of biofield effect transistor and its formation

Active Publication Date: 2018-02-13
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although BioFETs have advantages in many aspects, they still face challenges in their manufacture and / or operation, for example, due to compatibility issues between semiconductor manufacturing processes, biological applications, constraints and / or limitations on semiconductor manufacturing processes, electrical Integration of signaling and biological applications and / or other challenges arising from the implementation of large scale integration (LSI) processes

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  • Direct sensing biofets and fabrication methods
  • Direct sensing biofets and fabrication methods
  • Direct sensing biofets and fabrication methods

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Embodiment Construction

[0029] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing various elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. Also, the formation of the first component over or on the second component in the following description may include an embodiment in which the first and second components are formed in direct contact, and may also include an embodiment in which an interposition between the first and second components may be formed. An embodiment in which the first and second parts may not be in direct contact with other parts between one and the second part. Furthermore, references to relative positional terms such as "top," "front," "bottom," and "back" are used to provide relative relationships between elements and not to imply any absolute orientation. V...

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Abstract

Direct sensing BioFETs and fabrication methods. The present invention provides biofield effect transistors (BioFETs) and methods of making BioFET devices. The method includes forming the BioFET using one or more process steps compatible with or typical of a complementary metal oxide semiconductor (CMOS) process. BioFET devices include multiple microwells with sense gate bottoms and a number of stacked well sections. The bottom surface area of ​​the well portion is different from the top surface area of ​​the well portion directly below it. The microwells are formed by multiple etching operations through different materials, including sacrificial plugs, exposing the sense gates without plasma-induced damage.

Description

technical field [0001] The present invention relates to biosensors and methods of forming biosensors, and more particularly, the present invention relates to biofield effect transistors (bioFETs) and methods of forming them. Background technique [0002] Biosensors are devices for sensing and detecting biomolecules and operate based on electronic, electrochemical, optical and mechanical detection principles. Biosensors comprising transistors are sensors that electrically sense the charge, photon and mechanical properties of biological entities or biomolecules. Detection can be performed by detecting the biological entity or biomolecule itself, or by the interaction and reaction between specific reactants and the biological entity / biomolecule. These biosensors can be fabricated using semiconductor processes, which can rapidly convert electrical signals, and can be easily applied to integrated circuits (ICs) and MEMS. [0003] A BioFET (biofield effect transistor, biosensiti...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00G01N27/414B81C1/00
CPCG01N27/4145H10K19/10H01L21/823475H01L21/823437H01L21/31111H01L21/7684H01L21/76877H01L21/28525H01L21/32135
Inventor 张仪贤郑创仁林诗玮刘怡劭
Owner TAIWAN SEMICON MFG CO LTD
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