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Semiconductor device with microprobes and method for manufacturing the same

A micro-probe and semiconductor technology, which is applied in the direction of measuring devices, manufacturing measuring instruments, and parts of electrical measuring instruments, can solve the problems of complex overall process, protracted production time, poor yield, etc., and achieve the purpose of expanding the test area, The effect of increasing the number of test contact pins

Active Publication Date: 2016-12-21
SILICONWARE PRECISION IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, the aforementioned existing probe card manufacturing method needs to transfer the structure of step 1 to the structure of step 2. At the same time, semiconductor chip technology and multi-layer ceramic board technology are used, resulting in a more complicated overall process, poor yield and slow production time. Long, leading to problems such as cost increase. Moreover, the existing probes are prone to defects such as elastic fatigue or damage due to their small structure and the suspension of the base of the probe without the protection of the buffer layer.

Method used

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  • Semiconductor device with microprobes and method for manufacturing the same
  • Semiconductor device with microprobes and method for manufacturing the same
  • Semiconductor device with microprobes and method for manufacturing the same

Examples

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no. 1 example

[0079] The following will match Figure 2A to Figure 2U A schematic cross-sectional view of the first embodiment of the semiconductor device with micro-probes and its manufacturing method of the present invention is described in detail.

[0080] Such as Figure 2A As shown, a substrate 20 having opposite first surface 20a and second surface 20b is provided, and a first metal layer 201 is formed on the first surface 20a.

[0081] see also Figure 2B , which continues from Figure 2A , forming a first resistance layer 202 on the first metal layer 201 , the first resistance layer 202 has a first resistance layer opening 2020 exposing a portion of the first metal layer 201 .

[0082] Such as Figure 2C shown, which continues from Figure 2B process, remove the first metal layer 201 in the first resistance layer opening 2020 to form a first wiring layer 201', and remove the first resistance layer 202.

[0083] Such as Figure 2D shown, which continues from Figure 2C proces...

no. 2 example

[0101] see image 3 , which is a schematic cross-sectional view of the second embodiment of the semiconductor device with micro-probes of the present invention. The difference between this embodiment and the above-mentioned embodiments is that part of the first circuit layer 201' extends outward along the side of the semiconductor device (not shown) of the microprobe, and can be exposed to the atmosphere on the first circuit layer 201' Electrically connect the welding wire 32 for external electrical connection. As for other related processes, they are similar, so details are not repeated here.

no. 3 example

[0103] see Figure 4 , which is a schematic cross-sectional view of the third embodiment of the semiconductor device with microprobes of the present invention. The difference between this embodiment and the first embodiment is that the substrate 20 also has a conductive via 203 penetrating through the first surface 20a and the second surface 20b and electrically connecting the first circuit layer 201 ′, and on the substrate 20 The polymer material layer 204 is formed on the second surface 20b of the polyimide (PI) material, and the polymer material layer 204 has a third opening 205 corresponding to the exposed conductive via 203, and the conductive via hole Soldering bumps 206 are provided on the 203 for electrical connection with the outside. As for other related processes, they are similar, so details are not repeated here.

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Abstract

A semiconductor device with a microprobe and a manufacturing method thereof are provided. The semiconductor device comprises a substrate having a first surface and a second surface which are opposite to each other, a first circuit layer formed on the first surface of the substrate, a first dielectric layer formed on the first surface of the substrate and the first circuit layer and provided with a first hole for exposing the first circuit layer, a second circuit layer formed on the first dielectric layer and in the first hole, an insulation buffer layer formed on the first dielectric layer and the second circuit layer and provided with at least one insulation buffer layer hole for exposing the second circuit layer, a third circuit layer formed on the insulation buffer layer and in the insulation buffer layer hole, a second dielectric layer formed on the insulation buffer layer and the third circuit layer and provided with at least one second hole used for exposing the third circuit layer, and a microprobe disposed in the second hole of the second dielectric layer. The semiconductor device can effectively buffer the external force suffered by the microprobe and prevent elastic fatigue.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method. More specifically, the present invention relates to a semiconductor device with elastic fatigue-resistant microprobes and its manufacturing method. Background technique [0002] Nowadays, with the development of science and technology, manufacturers of electronic products have developed various types of test probe cards for testing electronic products. Due to the limited size of the probes and the high manufacturing cost of the traditional probe card manufacturing method, many bottlenecks need to be overcome in the process of manufacturing the probes. At present, the size trend of semiconductor chips tends to be miniaturized and there are more and more output contacts of the semiconductor chip, and the test probe structure is all made of small probe wiring. Therefore, it is necessary to continuously improve and overcome the probe structure. Advanced process technolog...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R3/00G01R1/067G01R1/073
Inventor 程吕义邱启新邱世冠
Owner SILICONWARE PRECISION IND CO LTD