Semiconductor device and manufacturing method thereof

Abstract

The invention provides a manufacturing method for a semiconductor device. The method includes: providing a semiconductor substrate and forming a gate dielectric layer and a gate material layer in order on the semiconductor substrate; forming a hard mask layer on the gate material layer and patterning the hard mask layer so as to form a pattern used for etching the gate material layer; executing ion injection so as to adjust the work function of the gate material layer; forming side-wall structures on the two sides of the hard-mask layer and forming variable-work-function areas in the gate material layer beneath the side-wall structures; using the side-wall structures as masks to etch the gate material layer and the gate dielectric layer so as to form gate structures, which are provided with the variable-work-function areas at the two sides, on the semiconductor substrate; and removing the side-wall structures and the hard mask layer on the top parts of the gate structures. According to the semiconductor device and the manufacturing method thereof, a short-channel effect is restrained and at the same time, the formed device structure does not affect improvement of other electrical parameters of an MOSFET.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a semiconductor device with variable work function regions formed on both sides of a gate structure and a manufacturing method thereof. Background technique [0002] With the continuous reduction of metal-oxide-semiconductor field effect transistor (MOSFET) device size, especially the continuous reduction of gate size, the short channel effect has become the main factor restricting the further improvement of MOSFET performance. The short channel effect affects the performance of the MOSFET from the following aspects: first, it affects the threshold voltage; second, it greatly reduces the saturation current of the drain terminal; third, it causes serious hot carrier effects, limiting the maximum Working voltage; Fourth, it makes the off-state characteristics of the device worse, and the static power consumption becomes larger. [0003] In order to suppress the short channe...

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Problems solved by technology

The short channel effect affects the performance of the MOSFET from the following aspects: first, it affects the threshold voltage; second, it greatly reduces the saturation current of the drain terminal; third, it causes serious hot carrier effects, which limits the maximum Working voltage; Fourth, it makes the off-state characteristics of the device worse and the static power consumption becomes larger

[0003] In order to suppress the short channel effect, many improvements have been made to the structure of the MOSFET in the prior art, but these improvements also affect the improvement of other electrical parameters of the MOSFET while suppressing the short channel effect

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