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A thyristor mesa structure with improved forward withstand voltage and its manufacturing process

A technology of mesa structure and manufacturing process, used in semiconductor/solid-state device manufacturing, electrical components, thyristors, etc., can solve the problems of inability to implement small thyristors, poor consistency, and low yield, and achieve high consistency and process stability. , The effect of improving the withstand voltage level

Active Publication Date: 2017-07-18
江苏吉莱微电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Some thyristors use special and complex processes to form positive angles, which are costly, poor in consistency, and low in yield, and are only suitable for high-current thyristors (above 100A), and cannot be implemented for small thyristors.

Method used

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  • A thyristor mesa structure with improved forward withstand voltage and its manufacturing process
  • A thyristor mesa structure with improved forward withstand voltage and its manufacturing process

Examples

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Effect test

Embodiment 1

[0019] A manufacturing process of a thyristor mesa structure with improved forward withstand voltage, the process steps include: double-sided polishing, oxidation, photolithography punch-through, punch-through diffusion, short base diffusion, photolithography cathode region, cathode diffusion, Photolithography mesa grooves, chemical etching mesa grooves, glass passivation, lithography lead holes, front aluminum evaporation, aluminum reverse etching, aluminum alloys, back sand blasting, back metallization, chip testing, dicing and chip packaging, the chemical The process conditions for corroding the table top tank are as follows: when the chemical etching solution is at -18°C, the depth of the etching tank is 60 μm, and the chemical etching solution is glacial acetic acid: hydrofluoric acid: nitric acid: sulfuric acid = 0.9:2:2:2 in molar ratio.

Embodiment 2

[0021] A manufacturing process of a thyristor mesa structure with improved forward withstand voltage, the process steps include: double-sided polishing, oxidation, photolithography punch-through, punch-through diffusion, short base diffusion, photolithography cathode region, cathode diffusion, Photolithography mesa grooves, chemical etching mesa grooves, glass passivation, lithography lead holes, front aluminum evaporation, aluminum reverse etching, aluminum alloys, back sand blasting, back metallization, chip testing, dicing and chip packaging, the chemical The process conditions for etching the table top tank are as follows: when the chemical etching solution is at -15°C, the depth of the etching tank is 65 μm, and the chemical etching solution is glacial acetic acid: hydrofluoric acid: nitric acid: sulfuric acid = 1:2:2:2 in molar ratio.

Embodiment 3

[0023] A manufacturing process of a thyristor mesa structure with improved forward withstand voltage, the process steps include: double-sided polishing, oxidation, photolithography punch-through, punch-through diffusion, short base diffusion, photolithography cathode region, cathode diffusion, Photolithography mesa grooves, chemical etching mesa grooves, glass passivation, lithography lead holes, front aluminum evaporation, aluminum reverse etching, aluminum alloys, back sand blasting, back metallization, chip testing, dicing and chip packaging, the chemical The process conditions for corroding the table top tank are as follows: when the chemical etching solution is at -12°C, the depth of the etching tank is 70 μm, and the chemical etching solution is glacial acetic acid: hydrofluoric acid: nitric acid: sulfuric acid = 1.1:2:2:2 in molar ratio.

[0024] The specific process steps are as follows:

[0025] 1. Double-sided polishing sheet

[0026] The resistivity of N-type silic...

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Abstract

The invention discloses a controllable silicon table top structure for improving forward direction voltage withstanding. The controllable silicon table top structure comprises a negative polarity region, a short base region, a long base region, a table top groove and boron punch-through diffusion regions, the boron punch-through diffusion regions are arranged at the periphery of the long base region, through rings are formed in each boron punch-through diffusion region, the table top groove is filled with glass powder, and positive angles are formed by table top structures of the table top groove. The invention further discloses a manufacturing technology of the controllable silicon table top structure for improving forward direction voltage withstanding. According to the positive angle table top structure, a special chemical corrosion liquid is used for changing the groove shape, the reasonable groove shape enables the controllable silicon table top structure to form the positive angles, and forward direction voltage withstanding is greatly improved; the technology is simple, only one silicon corrosion liquid is replaced, the technology is stable, the consistency is high, the degrees of the formed positive angles can be adjusted according to the requirements, and the controllable silicon voltage withstanding level is greatly improved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a thyristor mesa structure with improved forward withstand voltage. [0002] The invention also relates to a manufacturing process of a thyristor mesa structure with improved forward withstand voltage. Background technique [0003] In the manufacturing process of silicon controlled rectifiers, in order to form a good withstand voltage, it is usually achieved by digging grooves on the table and adding glass passivation. There are positive angles and negative angles in the matching between the mesa groove and the diffusion area. The positive angle structure can lengthen the barrier area of ​​the diffusion area under pressure, and the withstand voltage level is significantly improved, while the negative angle structure has a shorter barrier area. , low pressure. Such as figure 1 As shown, but because the silicon corrosion of the groove usually forms a fixed groove (parabolic shape), the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/74H01L29/06H01L21/3213
CPCH01L29/0661H01L29/66121H01L29/87
Inventor 耿开远周建刘宗贺李建新
Owner 江苏吉莱微电子股份有限公司
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