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A novel patterned substrate and its preparation method

A patterned substrate and graphics technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limited light extraction efficiency, etc., and achieve the effect of simple and easy preparation method, enhanced light output intensity, and improved light extraction efficiency

Active Publication Date: 2017-02-08
广东中图半导体科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the optical diffraction characteristics of the periodic microstructure, the light field distribution of the patterned substrate LED based on the hexagonal close-packed arrangement is limited to the position of the Bragg grid point in the hexagonal arrangement (as shown in Figure 2(a)), and the other positions no light distribution
In other words, the graphic array arranged according to the current hexagonal close-packed rules has a limited effect on improving the light extraction efficiency of LEDs.

Method used

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  • A novel patterned substrate and its preparation method
  • A novel patterned substrate and its preparation method
  • A novel patterned substrate and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043]A method for preparing a novel patterned substrate, comprising the steps of:

[0044] (1) Design and prepare a photolithography plate with an octaple quasicrystal pattern arrangement: the pattern arrangement is a repeated arrangement in a certain symmetrical manner with equilateral quadrilaterals and squares as combination units. A single figure is circular, the bottom diameter of the figure is 2 μm, and the distance between the figures is 3 μm;

[0045] (2) Coat the surface of the substrate (such as sapphire substrate, silicon carbide substrate, silicon substrate, gallium nitride substrate) with a positive photoresist, such as AZ601, with a thickness of 2μm-3μm, and apply the photoresist Perform post-baking, the temperature of the hot plate is 90°C-110°C, then use a stepper, such as Nikon I-line or G-line stepper, determine the exposure amount and focal length according to the thickness of the photoresist for exposure, and then use a special developer for exposure For ...

Embodiment 2

[0050] A method for preparing a novel patterned substrate, comprising the steps of:

[0051] (1) Designing and preparing an imprint template for nanoimprinting with twelve-fold quasicrystal pattern arrangement: the pattern arrangement is repeated in a certain symmetrical manner with equilateral triangles and squares as combination units. A single pattern is cylindrical, the bottom diameter of the pattern is 2 μm, the height of the pattern is 2 μm-3 μm, and the distance between the patterns is 3 μm. Imprint templates are circular silicon or nickel templates with a diameter of 2 inches - 4 inches. Anti-adhesive treatment is carried out on the surface of the template to prevent the damage of the template during the demoulding process;

[0052] (2) Coat the surface of the substrate (such as sapphire substrate, silicon carbide substrate, silicon substrate, gallium nitride substrate) with a special UV imprinting adhesive layer for nanoimprinting, with a thickness of 1 μm-2 μm, and ...

Embodiment 3

[0058] A method for preparing a novel patterned substrate, comprising the steps of:

[0059] (1) Design and prepare a photolithography plate with twelve-fold quasicrystal pattern arrangement;

[0060] (2) Deposit a silicon dioxide layer on the surface of the sapphire substrate with a thickness of 0.1 μm-2 μm, coat the photoresist on the silicon dioxide layer, and then perform exposure and development in sequence to transfer the photolithographic pattern to the photoresist On the resist layer; use BOE solution to etch the silicon dioxide layer, thereby transferring the pattern on the photoresist layer to the silicon dioxide layer and removing the remaining photoresist layer;

[0061] (3) Use wet etching technology to etch the sapphire substrate of the above-mentioned patterned silicon dioxide layer, the etching solution is a mixture of phosphoric acid and sulfuric acid, the ratio is 1:3 to 2:3, and the etching temperature is 220°C-300°C ℃. The patterned sapphire substrate can...

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Abstract

The invention discloses a novel patterned substrate and a manufacturing method thereof. A substrate pattern is of a non-periodic array structure, pattern arrangement has the characters of long-range order and short-range disorder, and Fourier transform is in high-order rotating symmetry. The patterned substrate can effectively improve the luminous efficiency of a GaN-based LED. The manufacturing method is simple and practicable and is matched with an existing patterned substrate technology, and the novel patterned substrate is suitable for industrial production.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a novel patterned substrate for growing III-V nitride materials and a preparation method thereof. Background technique [0002] III-V gallium nitride (GaN) is one of the most promising wide-bandgap semiconductor materials. Due to its unique bandgap range, excellent photoelectric performance and good chemical stability, this material has made significant breakthroughs and progress in short-wavelength optoelectronic devices. In particular, high-power and high-brightness GaN-based blue and green light-emitting diodes (LEDs) have been industrialized and widely used in outdoor large-screen displays, backlighting, outdoor lighting, traffic lights, and automobile tail lights. [0003] At present, GaN materials are basically obtained by heteroepitaxial growth methods, and the substrate materials used include sapphire substrates, silicon carbide substrates, and silicon substrates....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/0062H01L33/22
Inventor 付星星康凯廉宗隅张国义
Owner 广东中图半导体科技股份有限公司