Cross-linked metalloporphyrin nanocrystal and its preparation method and photodetector preparation method
A technology of metalloporphyrins and production methods, which is applied in photometry, optical radiation measurement, chemical instruments and methods using electric radiation detectors, and can solve the problems of complex preparation process of nanostructures, high cost of detectors, and low sensitivity , to achieve the effects of easy large-area preparation, low environmental requirements, and high sensitivity
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Embodiment 1
[0031] The photodetector of this embodiment is a bottom grid-top contact type, and its manufacturing method is as follows:
[0032] Step 1: Prepare a layer of 100nm thick gate electrode on the substrate by sputtering, the gate electrode is made of Si. Among them, the production method of the substrate is that PEI will be used as the substrate, followed by sonication with acetone, ethanol and purified water for 40 minutes, and then use N 2 Blow dry and place in a vacuum oven at 100°C for 10 minutes to form a substrate.
[0033] Step two, on the gate electrode, use a thermal oxidation method to plate a layer of 300nm thick SiO 2 As an insulating layer.
[0034] Step three, preparing cross-linked metalloporphyrin nanocrystals on the insulating layer, wherein the insulating layer serves as a receiving plate.
[0035] Step four, thermally evaporate a layer of source and drain electrodes made of gold with a thickness of 100 nm on the substrate and the cross-linked metalloporphyrin nanocryst...
Embodiment 2
[0041] The photodetector of this embodiment is a bottom grid-top contact type, and its manufacturing method is as follows:
[0042] Step 1: Prepare a layer of 100nm thick gate electrode on the substrate by thermal evaporation method, the gate electrode is made of gold. Wherein, the preparation method of the substrate is as described in Example 1.
[0043] Step 2: On the gate electrode, a 500nm thick insulating film such as polyvinylpyrrolidone (PVP) is plated as an insulating layer by spin coating.
[0044] Step three, preparing cross-linked metalloporphyrin nanocrystals on the insulating layer, wherein the insulating layer serves as a receiving plate.
[0045] Step 4: Prepare a layer of 100nm gold on the substrate and on the one-dimensional cross-linked metalloporphyrin nanocrystal to form the source electrode and the drain electrode. The parameters of the source and drain electrodes are as described in Embodiment 1.
[0046] Among them, the manufacturing method of using cross-linked...
Embodiment 3
[0049] The photodetector of this embodiment is a bottom grid-bottom contact type, and its manufacturing method is as follows:
[0050] Step 1: Prepare a 200nm thick gate electrode on the substrate by thermal evaporation, the gate electrode is made of silver. Wherein, the preparation method of the substrate is as described in Example 1.
[0051] Step 2: On the gate electrode, a layer of 100nm thick aluminum oxide is plated as an insulating layer using an atomic layer method.
[0052] Step 3: Prepare a layer of 100nm thick silver as source and drain electrodes on the substrate, gate electrode and insulating layer by means of thermal evaporation. The parameters of the source and drain electrodes are as described in Embodiment 1.
[0053] Step 4: Using the insulating layer and the source and drain electrodes as the receiving plate, the one-dimensional cross-linked metalloporphyrin nanocrystals are prepared by aerosol printing method.
[0054] Wherein, the manufacturing method of using cro...
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Abstract
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