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Switch Circuit and Microwave Integrated Circuit Based on High Electron Mobility Transistor

A high electron mobility, microwave integrated circuit technology, applied in the direction of circuits, electrical solid devices, electrical components, etc., can solve problems affecting device and circuit functions, reduce deformation, enhance function and stability, and improve criticality Effect of Line Width Uniformity

Active Publication Date: 2016-09-28
石以瑄 +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Together with the stress and strain induced during the growth or deposition of the epitaxial layer, more microcracks and defects will be generated in this III-nitride epitaxial layer, which will affect the function of the fabricated devices and circuits

Method used

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  • Switch Circuit and Microwave Integrated Circuit Based on High Electron Mobility Transistor
  • Switch Circuit and Microwave Integrated Circuit Based on High Electron Mobility Transistor
  • Switch Circuit and Microwave Integrated Circuit Based on High Electron Mobility Transistor

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Embodiment Construction

[0110] The specific embodiment of the present invention is further described below in conjunction with accompanying drawing and embodiment:

[0111]The semiconductor devices of the present invention are mainly based on III-nitride epitaxial layers or III-arsenide epitaxial layers deposited onto silicon, silicon carbide, sapphire, etc. substrates. Taking a silicon submount as an example, compound III-nitride epitaxial layers are typically deposited on (111) or (100) crystal planes. After deposition and cooling, stress or strain is generated in these composite III-nitride epitaxial layers and in the pedestal, and this stress has a significant effect on the AlGaN-GaN-AlN-Si [AlGaN-GaN-AlN-Si ] Intrinsic or low-doped GaAlN epitaxial layer in the structure is tensile stress (tensile stress), and in this GaAlN layer induced charge polarization (charge polarization). This charge polarization is positive on the side of the AlGaN layer close to the GaN and negative on the other side a...

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Abstract

The invention relates to an exchange circuit and a microwave integrated circuit which have improved line width evenness and fewer defects in a channel and are based on a high-electron-mobility transistor. In the process of manufacturing the exchange circuit and the microwave integrated circuit which are based on the high-electron-mobility transistor, composite epitaxial layer materials in an image field boundary area or a circuit cutting area are eliminated so that the deformation can be reduced, and therefore the evenness of the circuital line width is improved; in this way, the functions and the stability of the high-electron-mobility transistor, the exchange circuit and the microwave integrated circuit are enhanced, wherein the exchange circuit and the microwave integrated circuit are made of the high-electron-mobility transistor.

Description

technical field [0001] The present invention relates to a circuit used for power switching, a high electron mobility transistor device and a microwave integrated circuit (MMIC) used for microwave amplification, so as to reduce the occurrence of defect microcracks formed in them and enhance the line width Uniformity. Background technique [0002] In addition to the metal oxide semiconductor (MOS) structure, insulated gate bipolar transistor (IGBT) and lightly doped drain metal oxide semiconductor structure (LDMOS) devices commonly used for power switching and amplification, a III-nitride based Devices and circuits are also being developed. This is to meet the demand for higher power with reduced power loss. Existing devices and circuits made on silicon and gallium arsenide cannot meet these two requirements at the same time. Applications also require high-power devices and circuits that can operate in millimeter-wave bands up to 200 GHz. [0003] For III-nitride materials...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/778
Inventor 石以瑄邱树农吴杰欣邱星星石宇琦
Owner 石以瑄