A method of manufacturing a semiconductor device

Abstract

The invention provides a method for manufacturing a semiconductor device. The method comprises the following steps: providing a semiconductor substrate, sequentially forming a gate dielectric layer and a gate material layer on the semiconductor substrate and performing first ion implantation; forming a hard mask layer, and sequentially etching the hard mask layer, the gate material layer and the gate dielectric layer to form a gate structure; back-etching the hard mask layer to remove the portions, above the two sides of the top of the gate structure, of the hard mask layer; forming a side wall material layer surrounding the gate structure and the hard mask layer; etching the side wall material layer to form side walls respectively on the two sides of the hard mask layer and on the two sides of the gate structure; forming a sacrificial interlayer dielectric layer on the two sides of the side walls formed on the two sides of the gate structure; and performing second ion implantation and implanting doped ions in the middle or side of the gate material layer. According to the method of the invention, the formed device structure does not affect the improvement of other electrical parameters of an MOSFET while the short channel effect is suppressed.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a manufacturing method of a semiconductor device with a variable work function region formed in a gate structure. Background technique [0002] With the continuous reduction of metal-oxide-semiconductor field effect transistor (MOSFET) device size, especially the continuous reduction of gate size, the short channel effect has become the main factor restricting the further improvement of MOSFET performance. The short channel effect affects the performance of the MOSFET from the following aspects: first, it affects the threshold voltage; second, it greatly reduces the saturation current of the drain terminal; third, it causes serious hot carrier effects, limiting the maximum Working voltage; Fourth, it makes the off-state characteristics of the device worse, and the static power consumption becomes larger. [0003] In order to suppress the short channel effect, many improve...

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Problems solved by technology

The short channel effect affects the performance of the MOSFET from the following aspects: first, it affects the threshold voltage; second, it greatly reduces the saturation current of the drain terminal; third, it causes serious hot carrier effects, which limits the maximum Working voltage; Fourth, it makes the off-state characteristics of the device worse and the static power consumption becomes larger

[0003] In order to suppress the short channel effect, many improvements have been made to the structure of the MOSFET in the prior art, but these improvements also affect the improvement of other electrical parameters of the MOSFET while suppressing the short channel effect

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