Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation method of nitrogen-based double-acceptor co-doped zinc oxide thin film

A zinc oxide film and acceptor technology, applied in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve problems such as instability of ZnO film, achieve easy control of deposition and doping processes, and simple preparation process Effect

Active Publication Date: 2016-12-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research.
Although nitrogen doping makes the preparation of p-type ZnO possible in theoretical calculations, many experiments have shown that it may be because the doped N atoms will combine to form N molecules and occupy the replacement position ((N 2 )o), forming a dual-donor defect, leading to the instability of N-doped ZnO films alone

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nitrogen-based double-acceptor co-doped zinc oxide thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] see figure 1 , a method for preparing a nitrogen-based double-acceptor co-doped zinc oxide film provided by an embodiment of the present invention includes:

[0020] The silicon substrate or glass substrate is treated with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaned with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid: hydrogen peroxide = 4: 1, so that the surface of the substrate has hydroxyl (-OH).

[0021] Vacuumize and heat the substrate, chamber and pipeline to achieve various working environments required for the experiment, where the substrate temperature is 300°C.

[0022] A group V dopant source, As(CH 3 ) 3 , the dopant source is deposited on the substrate surface as an acceptor dopant source, and then N 2 The carrier gas purged the reaction chamber; the dopant source was introduced for 0.08s, 2 The purge time is 50s.

[0023] The zinc source Zn(C 2 h 5 ) 2 , the groups on the substrate surface that ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a method for preparing a nitrogen-based dual acceptor co-doped zinc oxide thin film, which comprises: placing a substrate in a reaction chamber of an atomic layer deposition device; performing multi-component composite deposition, the composite deposition comprising introducing As-doping source deposition for one time before zinc source deposition and introducing nitrogen-doping source deposition for one time before oxygen source deposition; and performing cyclic deposition of the multi-component complex, to obtain an N-As dual acceptor co-doped zinc oxide thin film prepared through atomic layer deposition. In the method for preparing a nitrogen-based dual acceptor co-doped zinc oxide thin film provided by the present invention, co-doping of a whole thin film structure is completed to achieve N-As dual acceptor co-doping by using an ALD technology in a zinc oxide thin film generating process. The present invention has a simple preparation process, deposition and doping processes are easy to control, and the prepared co-doped zinc oxide thin film facilitates p-type doping of the zinc oxide thin film and improves stability of p-type electrical property.

Description

technical field [0001] The invention relates to the technical field of preparation and doping of zinc oxide thin films, in particular to a method for preparing a nitrogen-based double-acceptor co-doped zinc oxide thin film. Background technique [0002] Zinc oxide (ZnO), as a new type II-VI group direct bandgap wide bandgap compound, has a large room temperature bandgap width of 3.37eV, and the free exciton binding energy is as high as 60meV, and it is more and more popular as a semiconductor material. Pay attention to. Compared with other wide-bandgap semiconductor materials, ZnO film has low growth temperature, good radiation resistance, low threshold power of stimulated radiation and high energy conversion efficiency. and other high-tech key basic materials. However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research. Although the theoretical calcul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/40H01L21/02
CPCH01L21/02579C23C16/407C23C16/45531C23C16/45542H01L21/02554
Inventor 卢维尔夏洋李超波解婧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI