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A method for preparing double-acceptor co-doped zinc oxide thin films by atomic layer deposition

An atomic layer deposition, zinc oxide thin film technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, can solve the problem of instability of ZnO thin film, achieve easy control of deposition and doping process, preparation process simple effect

Active Publication Date: 2017-05-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research.
Although nitrogen doping makes the preparation of p-type ZnO possible in theoretical calculations, many experiments have shown that it may be because the doped N atoms will combine to form N molecules and occupy the replacement position ((N 2 )o), forming a dual-donor defect, leading to the instability of N-doped ZnO films alone

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  • A method for preparing double-acceptor co-doped zinc oxide thin films by atomic layer deposition

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Embodiment Construction

[0020] see figure 1 , a method for preparing a double-acceptor co-doped zinc oxide film by atomic layer deposition provided by an embodiment of the present invention includes:

[0021] The silicon substrate or glass substrate is treated with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaned with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid: hydrogen peroxide = 4: 1, so that the surface of the substrate has hydroxyl (-OH).

[0022] Vacuumize and heat the substrate, chamber and pipeline to achieve various working environments required for the experiment, where the substrate temperature is 300°C.

[0023] A group V dopant source P(CH 3 ) 3 , the dopant source is deposited on the substrate surface as an acceptor dopant source, and then N 2 The carrier gas purged the reaction chamber; the dopant source was introduced for 0.08s, 2 The purge time is 50s.

[0024] The zinc source Zn(C 2 h 5 ) 2 , the groups on the substrate sur...

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Abstract

The invention discloses a method for preparing a double-acceptor co-doped zinc oxide thin film through atomic layer deposition. The method includes the steps: placing a substrate in a reaction chamber of an atomic layer deposition device; carrying out multi-component composite deposition, wherein the composite deposition includes before zinc source deposition, introducing P doping source deposition for one time and oxygen source deposition for one time, and then introducing nitrogen doping source deposition for one time; and carrying out cyclic deposition of the multi-component complex, and thus obtaining the N-P double-acceptor co-doped zinc oxide thin film prepared through the atomic layer deposition. According to the method for preparing the double-acceptor co-doped zinc oxide thin film through the atomic layer deposition, the ALD technology is utilized, during the zinc oxide thin film growth process, co-doping of a whole thin film structure is completed, and the N-P double-acceptor co-doping is achieved. The preparation process is simple, the deposition and doping processes are easy to control, and the prepared co-doped zinc oxide thin film is beneficial for p-type doping of the zinc oxide thin film and improvement of the stability of p-type electrical properties.

Description

technical field [0001] The invention relates to the technical field of preparation and doping of zinc oxide thin films, in particular to a method for preparing double-acceptor co-doped zinc oxide thin films by atomic layer deposition. Background technique [0002] Zinc oxide (ZnO), as a new type of I-VI group direct bandgap wide bandgap compound, has a large room temperature bandgap of 3.37eV, and the free exciton binding energy is as high as 60meV, and it is more and more popular as a semiconductor material. Pay attention to. Compared with other wide-bandgap semiconductor materials, ZnO film has low growth temperature, good radiation resistance, low threshold power of stimulated radiation and high energy conversion efficiency. and other high-tech key basic materials. However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research. Although the theoretical...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/40
Inventor 卢维尔夏洋李超波李楠解婧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI