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Method for preparing n-as co-doped zinc oxide film by atomic layer deposition

A technology of atomic layer deposition and zinc oxide thin film, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of ZnO thin film instability, etc., and achieve easy control of deposition and doping process and excellent preparation process simple effect

Active Publication Date: 2017-06-20
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research.
Although nitrogen doping makes the preparation of p-type ZnO possible in theoretical calculations, many experiments have shown that it may be because the doped N atoms will combine to form N molecules and occupy the replacement position ((N 2 )o), forming a dual-donor defect, leading to the instability of N-doped ZnO films alone

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  • Method for preparing n-as co-doped zinc oxide film by atomic layer deposition

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Embodiment Construction

[0019] see figure 1 A method for preparing an N-As co-doped zinc oxide film by atomic layer deposition provided by an embodiment of the present invention includes:

[0020] The silicon substrate or glass substrate is treated with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaned with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid: hydrogen peroxide = 4: 1, so that the surface of the substrate has hydroxyl (-OH).

[0021] Vacuumize and heat the substrate, chamber and pipeline to achieve various working environments required for the experiment, where the substrate temperature is 300°C.

[0022] A group V dopant source, As(CH 3 ) 3 , the dopant source is deposited on the substrate surface as an acceptor dopant source, and then N 2 The carrier gas purged the reaction chamber; the dopant source was introduced for 0.08s, 2 The purge time is 50s.

[0023] The zinc source Zn(C 2 h 5 ) 2 , the groups on the substrate surface that ...

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Abstract

The invention discloses a method for preparing an N-As-codoped zinc oxide film through atomic layer deposition. The method comprises the following steps: putting a substrate in an atomic layer deposition reaction chamber, carrying out multi-component composite deposition, and carrying out cycle deposition on a multi-component complex to obtain the N-As double-acceptor codoped zinc oxide film through atomic layer deposition, wherein the composite deposition comprises the processes of one-time As doping source introduced deposition before zinc source deposition, and one-time nitrogen doping source deposition after oxygen source deposition. The method for preparing the N-As-codoped zinc oxide film through atomic layer deposition utilizes an ALD technology to complete the codoping of a whole film structure in the zinc oxide film growth process in order to realize the N-As double-acceptor codoping. The preparation method has the advantages of simplicity, and easy control of the deposition and doping process, and the codoped zinc oxide film is in favor of the p-type doping of a zinc oxide film and the improvement of the stability of the p-type electric property.

Description

technical field [0001] The invention relates to the technical field of preparation and doping of zinc oxide thin films, in particular to a method for preparing N-As co-doped zinc oxide thin films by atomic layer deposition. Background technique [0002] Zinc oxide (ZnO), as a new type II-VI group direct bandgap wide bandgap compound, has a large room temperature bandgap width of 3.37eV, and the free exciton binding energy is as high as 60meV, and it is more and more popular as a semiconductor material. Pay attention to. Compared with other wide-bandgap semiconductor materials, ZnO film has low growth temperature, good radiation resistance, low threshold power of stimulated radiation and high energy conversion efficiency. and other high-tech key basic materials. However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research. Although the theoretical calcul...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/40
Inventor 卢维尔夏洋李超波张阳董亚斌
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI