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A kind of preparation method of p n co-doped zinc oxide thin film

A zinc oxide thin film, P-N technology, applied in the direction of gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problems of ZnO thin film instability, etc., and achieve easy control of deposition and doping process and simple preparation process Effect

Active Publication Date: 2017-03-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research.
Although nitrogen doping makes the preparation of p-type ZnO possible in theoretical calculations, many experiments have shown that it may be because the doped N atoms will combine to form N molecules and occupy the replacement position ((N 2 )o), forming a dual-donor defect, leading to the instability of N-doped ZnO films alone

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  • A kind of preparation method of p n co-doped zinc oxide thin film

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Embodiment Construction

[0019] see figure 1 , a method for preparing a P-N co-doped zinc oxide film provided in an embodiment of the present invention includes:

[0020] The silicon substrate or glass substrate is treated with concentrated sulfuric acid hydrogen peroxide, and then ultrasonically cleaned with ultrapure water, N 2 Blow dry, wherein concentrated sulfuric acid: hydrogen peroxide = 4: 1, so that the surface of the substrate has hydroxyl (-OH).

[0021] Vacuumize and heat the substrate, chamber and pipeline to achieve various working environments required for the experiment, where the substrate temperature is 300°C.

[0022] A group V dopant source P(CH 3 ) 3 , the dopant source is deposited on the substrate surface as an acceptor dopant source, and then N 2 The carrier gas purged the reaction chamber; the dopant source was introduced for 0.08s, 2 The purge time is 50s.

[0023] The zinc source Zn(C 2 h 5 ) 2 , the groups on the substrate surface that have not reacted with the P d...

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Abstract

A disclosed preparation method for a P-N co-doped zinc oxide film comprises: putting a substrate in a reaction chamber of atomic layer deposition equipment; performing multicomponent composite deposition, wherein the composite deposition comprises a P dopant source deposition introduced before zinc source deposition and a nitrogen dopant source deposition introduced before oxygen source deposition; and performing circular deposition on the multicomponent composite system, so as to obtain the P-N double acceptor co-doped zinc oxide film prepared by employing atomic layer deposition. The provided preparation method for the double acceptor co-doped zinc oxide film finishes co-doping of the whole film structure for obtaining co-doping of P-N double acceptors by utilizing ALD technology. The preparation technology is simple, deposition and doping processes are easy to control, and the prepared co-doped zinc oxide film is beneficial for p-type doping of the zinc oxide film and improvement on electrical property stability of a p-type doped zinc oxide film.

Description

technical field [0001] The invention relates to the technical field of preparation and doping of zinc oxide thin films, in particular to a preparation method of P-N co-doped zinc oxide thin films. Background technique [0002] Zinc oxide (ZnO), as a new type II-VI group direct bandgap wide bandgap compound, has a large room temperature bandgap width of 3.37eV, and the free exciton binding energy is as high as 60meV, and it is more and more popular as a semiconductor material. Pay attention to. Compared with other wide-bandgap semiconductor materials, ZnO film has low growth temperature, good radiation resistance, low threshold power of stimulated radiation and high energy conversion efficiency. and other high-tech key basic materials. However, due to the existence of defects in intrinsic ZnO, ZnO is n-type, and the preparation of p-type ZnO thin films is currently a hot and difficult point in ZnO-related research. Although the theoretical calculation of nitrogen doping ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/40C23C16/44H01L21/02H01L21/365
Inventor 卢维尔夏洋李超波董亚斌解婧
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI