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Preparation method for lead zirconate-titanate piezoelectric film

A lead zirconate titanate piezoelectric and piezoelectric thin film technology, which is applied in the field of preparation of lead zirconate titanate piezoelectric thin film, can solve the problems that Pt cannot be directly deposited on the substrate material, and the bonding force of Pt interface is not high, so as to reduce the cost. Effects of nuclear free energy, high preferred orientation and piezoelectric coefficient, and low preparation cost

Active Publication Date: 2014-06-25
NO 52 INST OF CHINA NORTH IND GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Piezoelectric films must be deposited on conductive materials. The commonly used conductive material is Pt. However, Pt cannot be directly deposited on the substrate material due to the low interfacial bonding force of Pt and the easy formation of platinum silicide during heat treatment.
Simultaneously, the diffusion of silicon from the substrate material into the PZT layer leads to the formation of the pyrochlore phase

Method used

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  • Preparation method for lead zirconate-titanate piezoelectric film
  • Preparation method for lead zirconate-titanate piezoelectric film
  • Preparation method for lead zirconate-titanate piezoelectric film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Mix 50mL of lead acetate trihydrate with a concentration of 0.1mol / L and 100mL of 2-methoxyethanol in a 500mL flask, and then mix 50mL of titanium isopropoxide with a concentration of 0.1mol / L and 100mL of 2-methoxyethanol in another 500mL flask. ethanol mix. The titanium isopropoxide solution was stirred while the lead acetate solution was vacuum distilled. After the vacuum distillation of the lead acetate solution was completed, the uniformly mixed titanium isopropoxide solution was added to the lead acetate solution in a glove box. The flask was then sealed and removed from the glove box for further vacuum distillation. After 3 h, the solution was transferred to a device containing a magnetic stir bar, and 3 mL of formamide was slowly added as a dryness control agent. The vessel was then sealed and stirred on a stir table for 12h. Mix 50mL of 0.1mol / L lead acetate trihydrate with 100mL of 2-methoxyethanol in a 500mL flask, then mix 50mL of 0.047mol / L titanium isop...

Embodiment 2

[0022]Mix 50mL of lead acetate trihydrate with a concentration of 0.1mol / L and 100mL of 2-methoxyethanol in a 500mL flask, and then mix 50mL of titanium isopropoxide with a concentration of 0.1mol / L and 100mL of 2-methoxyethanol in another 500mL flask. ethanol mix. The titanium isopropoxide solution was stirred while the lead acetate solution was vacuum distilled. After the vacuum distillation of the lead acetate solution was completed, the uniformly mixed titanium isopropoxide solution was added to the lead acetate solution in a glove box. The flask was then sealed and removed from the glove box for further vacuum distillation. After 3 h, the solution was transferred to a device containing a magnetic stir bar, and 3 mL of formamide was slowly added as a dryness control agent. The vessel was then sealed and stirred on a stir table for 12h. Mix 50mL of 0.1mol / L lead acetate trihydrate with 100mL of 2-methoxyethanol in a 500mL flask, then mix 50mL of 0.047mol / L titanium isopr...

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Abstract

A preparation method for a lead zirconate-titanate piezoelectric film is characterized by employing a sol-gel process for preparation, firstly respectively preparing a PbTiO3 seed crystal layer stable-state sol and a PbZr1-xTixO3 stable-state sol; coating a substrate with the PbTiO3 seed crystal layer stable-state sol in a rotation manner as a transition layer and a seed crystal layer; and finally coating the prepared substrate with the PbZr1-xTixO3 stable-state sol in a rotation manner, so as to obtain the PbTiO3 seed crystal layer induced preferred-orientation grown PbZr1-xTixO3 piezoelectric film. According to the preparation method, by deposing PbTiO3 on the substrate in advance as the transition layer and the seed crystal layer, the nucleation free energy of the PZT film is reduced, thereby reducing crystallization temperature and improving the microstructure of PZT film; and through the induction effect of the seed crystal layer, lead zirconate-titanate (PbZr1-xTixO3) piezoelectric film grows along a preferred crystalline phase, thereby obtaining a high-piezoelectric-coefficient piezoelectric film.

Description

technical field [0001] The invention relates to a preparation method of a lead zirconate titanate piezoelectric film, in particular to a lead zirconate titanate piezoelectric film with high (111) orientation degree and high piezoelectric coefficient prepared by using a sol-gel process. Background technique [0002] Piezoelectric thin film is the core part of various micro sensors and actuators. People use magnetron sputtering method, sol-gel method (Sol-Ge1), electrophoretic deposition method and pulsed laser deposition method (PLD) and other methods respectively Prepared such as PbTiO 3 (lead titanate), PbZr 1-x Ti x o 3 (PZT) (lead zirconate titanate), Pb 1-x Ca x TiO 3 (PCT) (lead perovskite), (Pb x La 1-x )(Zr y Ti 1-y )O 3 (PLZT) (lanthanum-doped lead zirconate titanate) and other lead-based piezoelectric films. [0003] The sol-gel method (Sol-Gel method) is a low-cost piezoelectric film preparation method, which has the advantages of easy control of the st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/624
Inventor 李明利纪松钱坤明张延松丁昂
Owner NO 52 INST OF CHINA NORTH IND GRP CORP