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Memory cell, and electrically erasable programmable read-only memory and control method of read-only memory

A memory cell, read-only memory technology, applied in the semiconductor field, can solve problems such as poor memory performance, and achieve the effect of improving performance

Inactive Publication Date: 2014-06-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to provide a memory unit, an EEPROM and a control method thereof, so as to solve the problem of poor performance of the existing EEPROM

Method used

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  • Memory cell, and electrically erasable programmable read-only memory and control method of read-only memory
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Embodiment Construction

[0028] The memory unit, the electrically erasable programmable read-only memory and the control method thereof proposed by the present invention will be further described in detail below in conjunction with the drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0029] Please refer to figure 2 , which is a schematic structural diagram of a memory unit according to an embodiment of the present invention. like figure 2 As shown, the memory cell 200 of the embodiment of the present invention includes: a semiconductor substrate 201, a word line 202, a first active region 203 and a second active region 204; the word line 202, the first active region 203 and the second act...

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Abstract

The invention provides a memory cell, an electrically erasable programmable read-only memory and a control method of the read-only memory. The lengths of control gates are increased to be equal to those of floating gates, and erasing operation is controlled through active areas to increase the coupling coefficient between the control gates and the floating gates and simultaneously thin a gate oxide layer between a word line and a semiconductor substrate, so that the performance of the electrically erasable programmable read-only memory is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory unit, an electrically erasable programmable read-only memory and a control method thereof. Background technique [0002] With the development of storage technology, various types of memory have emerged, such as random access memory (RAM), read-only memory (ROM), dynamic random access memory (DRAM), erasable programmable read-only memory (EPROM), electrically programmable Erase programmable read-only memory (EEPROM) and flash memory (Flash), etc. Among them, the electrically erasable programmable read-only memory is a kind of memory whose data will not be lost after power failure. It can erase the existing information on the computer or special equipment, reprogram it, and plug and play. [0003] Please refer to figure 1 , which is a schematic structural diagram of a memory cell used in an electrically erasable programmable read-only memory in the prior art. lik...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/14H01L27/115H10B69/00
Inventor 顾靖
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP