Unlock instant, AI-driven research and patent intelligence for your innovation.

Magnetic random access memory and formation method thereof

A technology of magnetoresistive memory and barrier layer, applied in the fields of magnetic field controlled resistors, components of electromagnetic equipment, manufacturing/processing of electromagnetic devices, etc., which can solve the problems of large drive current, improvement, unfavorable device stability and device integration and other problems, to achieve the effect of enhancing the influence and forming a simple process

Inactive Publication Date: 2014-06-25
SEMICON MFG INT (SHANGHAI) CORP
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when the existing magnetoresistive memory is programmed, the first programming line usually requires a large driving current, which is not conducive to the stability of the device and the improvement of the integration of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic random access memory and formation method thereof
  • Magnetic random access memory and formation method thereof
  • Magnetic random access memory and formation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] When the existing magnetoresistive memory is programmed, the first programming line usually requires a large programming current, please refer to figure 2 , figure 2 It is a schematic cross-sectional structure diagram of the first programming line of the existing magnetoresistive memory, including: a substrate 100, a metal layer 101 located in the substrate 100, a barrier layer 102 between the metal layer 101 and the substrate 100, the metal layer 101 and the barrier layer 102 constitutes a first programming line, the metal layer 101 is usually made of copper, and the material of the barrier layer 102 is usually Ta or TaN.

[0037] The inventors found that when programming the magnetoresistive memory, since metal copper, Ta and TaN are not good magnetic conductors, the magnetic pole lines generated by the first programming line make the magnetic poles The lines 11 are scattered, and the dispersion of the magnetic pole lines 11 will weaken the influence of the magneti...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a magnetic random access memory and a formation method thereof. The magnetic random access memory comprises the following parts: a semiconductor substrate, wherein the semiconductor substrate is provided with a first dielectric layer; a groove in the first dielectric layer; a cobalt metal layer on the side walls and bottom surface of the groove; a first metal layer on the cobalt metal layer, wherein the first metal layer fully fills the groove and the first metal layer serves as a first programming line of the magnetic random access memory; a second dielectric layer on the first dielectric layer and the first metal layer; and a magnetic tunnel junction on the second dielectric layer, wherein the position of the magnetic tunnel junction is corresponding to the position of the first programming line. The magnetic tunnel junction comprises a lower magnetic material layer, an insulation layer on the lower magnetic material layer and an upper magnetic material layer on the insulation layer. The cobalt metal layer exhibits good magnetoconductivity, so that magnetic lines produced by the first programming line are allowed to be gathered and the magnitude of a drive current during programming can be effectively reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a magnetoresistive memory and a forming method thereof. Background technique [0002] Magneto-resistive memory (MRAM, Magnetic Random Access Memory) is a new type of non-volatile memory (NVM, Non-volatile Memory). Magneto-resistive memory has high integration density, high response speed and multiple write endurance. Since the feature size of flash memory (Flash Memory) cannot be reduced indefinitely, with the improvement of technology level, magnetoresistive memory may become the mainstream product in the memory field. [0003] The core component in the magnetoresistive memory is the magnetic tunnel junction (MTJ, Magnetic Tunnel Junction). The simplest magnetic tunnel junction includes a three-layer structure. Please refer to figure 1 , including: an upper magnetic material layer (free ferromagnetic layer) 11 located above, an insulating layer 12 located in the middl...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/12H10N50/10H10N50/01H10N50/80
CPCH01L43/02H01L43/12H10N50/01H10N50/10
Inventor 陈文甫何朋张世栋施森华
Owner SEMICON MFG INT (SHANGHAI) CORP