Thin-film deposition device and thin-film deposition method
A thin film deposition device and thin film deposition technology, which are applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of thin thickness of the middle part of the silicon wafer, poor TEOS gas flow, etc., and improve the film thickness. Uniformity, improving deposition rate, and increasing the effect of chip spacing
Inactive Publication Date: 2014-07-02
SHANGHAI HUALI MICROELECTRONICS CORP
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However if figure 2 As shown, due to the small spacing between the silicon wafers and the poor fluidity of the TEOS special gas, the TEOS special gas is not easy to enter the middle of the silicon wafer, resulting in the thickness of the middle part of the silicon wafer being thinner than the edge
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[0029] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0030] This invention relates to the deposition of thin films on silicon wafers. In the following examples, thin films were deposited in horizontal batch reactor tubes, particularly silicon dioxide films using TEOS as a precursor. However, it should be noted that the thin film deposition of the present invention is not limited thereto, other precursors such as SiH 4 and O 2 Deposition of silicon dioxide films can also be used for deposition of other types of films, such as metal films, organosilicate films, and can be performed in other types of batch reactor tub...
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The invention discloses a thin-film deposition device. The thin-film deposition device comprises a wafer vessel, a reacting furnace tube and a gas supplying unit, wherein the wafer vessel comprises a plurality of supporting columns and a plurality of holding parts which are arranged at mutually corresponding positions of the inner peripheral sides of the supporting columns and are used for holding the outer peripheral sides of a plurality of silicon wafers; the arrangement for the holding parts of each supporting column is as follows: the intervals of all the adjacent holding parts are sequentially alternated by a first interval and a second interval, all the adjacent holding parts are spaced in a manner that two adjacent holding parts of each first interval keep the silicon wafers in a manner of being opposite to a surface to be processed, and the first interval is greater than the second interval. The thin-film deposition device has the advantage that the uniformity of film thickness can be effectively improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a thin film deposition device and a thin film deposition method. Background technique [0002] Silicon dioxide thin films with good thermal insulation and relatively low dielectric constant play an important role in electronic devices. Silicon dioxide thin films have good isolation properties and have a good interface with silicon, which also makes silicon dioxide thin films have successful applications in VLSI (Very Large Scale Integration) systems. Chemical vapor deposition (CVD) technology is one of the main methods for preparing silicon dioxide thin films. It uses gaseous precursors to form solid thin films through chemical reactions between atoms and molecules. where the precursor can be SiH 4 and O 2 The gaseous material can also be the TEOS special gas formed after the pyrolysis of the liquid source material such as TEOS. Taking the TEOS deposition ...
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Login to View More IPC IPC(8): C23C16/44C23C16/455C23C16/40
Inventor 江润峰曹威戴树刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP