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Method for preparing ridge type optical waveguide through standard CMOS process

An optical waveguide and ridge-type technology, applied in the field of optical waveguide, can solve the problems of reducing circuit performance, increasing process cost, and increasing process complexity.

Active Publication Date: 2014-07-30
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Replacing the substrate of a CMOS integrated circuit will reduce the performance of the circuit and also affect the stability of the standard CMOS process; while the method of hybrid integration will increase the complexity of the process and increase the cost of the process

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  • Method for preparing ridge type optical waveguide through standard CMOS process
  • Method for preparing ridge type optical waveguide through standard CMOS process
  • Method for preparing ridge type optical waveguide through standard CMOS process

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Embodiment Construction

[0015] see figure 1 figure 2 As shown, the present invention provides a kind of method that adopts standard CMOS technology to prepare ridge optical waveguide, comprises the steps:

[0016] Step 1: Take a substrate 11 as the core layer of the ridge optical waveguide, and the material of the substrate 11 is silicon. The substrate 11 adopts a standard CMOS process substrate, and the doping is generally p-type 10 16 cm -3 , the absorption coefficient is 0.06cm -1 , will cause a transmission loss of 0.26dB / cm. For intra-chip communication, the loss is negligible due to the short distance.

[0017] Step 2: Prepare two local oxidation isolation layers 12 on the substrate 11 with a predetermined distance apart to form the cladding layer of the ridge optical waveguide, the local oxidation isolation layers 12 are formed by the local oxidation technology of silicon in the standard CMOS process, The material of the partial oxidation isolation layer 12 is silicon dioxide. The local...

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Abstract

The invention discloses a method for preparing a ridge type optical waveguide through a standard CMOS process. The method comprises the following steps that (1) a substrate is taken to serve as a core layer of the ridge type optical waveguide; (2) two local oxide isolation layers are prepared on the substrate, and separated for a preset distance, and cladding on the two sides of the ridge type optical waveguide is formed; (3) cladding is prepared between the two local oxide isolation layers and on the local oxide isolation layers, and upper cladding of the ridge type optical waveguide is formed; (4) the substrate is thinned, and preparation is completed. According to the method, manufacturing is completely carried out through the standard CMOS process, and monolithic integration between the optical waveguide and a CMOS circuit can be achieved.

Description

technical field [0001] The invention relates to an optical waveguide, in particular to a method for preparing a ridge-type optical waveguide by adopting a standard CMOS process. Background technique [0002] In the past half century, with the development of integrated circuits, silicon-based materials and device technology have been very mature, and with the continuous reduction of process feature size, the integration of integrated circuits has been developing rapidly in accordance with Moore's law. The higher integration of chips brings not only an increase in the number of transistors, but also an increase in chip functions and processing speed. However, as feature sizes shrink and integration levels continue to increase, the limitations of microelectronics processes are becoming increasingly apparent. Although the delay and power consumption of individual transistors are getting smaller and smaller, the delay and power consumption of interconnect lines are getting large...

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Application Information

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IPC IPC(8): H01L31/18H01L31/173
CPCG02B6/13Y02P70/50
Inventor 黄北举张赞张赞允程传同毛旭瑞陈弘达
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI