A kind of preparation method of high-purity submicron ZNS powder

Abstract

The invention discloses a method for preparing high-purity submicron ZnS powder. The method comprises the following steps: filling an H2SO4 deionized water solution in a reaction still A, adding high-purity ZnO powder into the H2SO4 deionized water solution, and standing after reaction is finished to obtain a high-purity ZnSO4 transparent solution; filling a NaOH solution into a reaction still B, simultaneously introducing H2S gas into the reaction still B, and standing to obtain a high-purity NaHS transparent solution; adding sodium lauryl sulfate into the ZnSO4 transparent solution, adding the NaHS solution after agitating, continuously agitating after reaction is finished, and standing to obtain precipitates; carrying out washing, draining, drying, ammonia catalytic dehydration and de-oxygenation to obtain the high-purity submicron ZnS powder. The product purity reaches more than 99.9%. The more important is that the product grain diameter is small and is in a range between 300nm and 500nm, and the grain diameter of the ZnS powder prepared by a traditional method is always between several micrometers and a dozen micrometers at preset. The use of the sodium lauryl sulfate as a surfactant solution is favorable to agglomeration and cementation among the particles. The dispersion degree of the particles is enhanced, and the surfaces of the particles are more regular.

Description

Technical field [0001] The invention relates to a preparation method of ZnS powder, in particular to a preparation method of high-purity submicron ZnS powder that can be used in the fields of paint, pigment, luminescent powder, optical coating, fluorescent screen, plastics, rubber, aerospace, etc. , Belongs to the field of chemical technology. Background technique [0002] As an important group II and VI compound semiconductor material, the research on ZnS has a history of more than 130 years since it was discovered by the French chemist Sidot in 1868. Because of its excellent physical properties, such as wide band gap, high refractive index, and visible light The high transmittance in the range and the huge application potential in the fields of applied optics, electronics and optoelectronic devices have attracted great attention. [0003] ZnS is a direct wide band gap semiconductor material with a band gap of 3.68-3.8eV. Through doping, it can achieve high-efficiency visible lig...

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Problems solved by technology

[0005] At present, the preparation of ZnS powder materials mainly adopts physical methods such as γ-ray radiation method, microwave radiation method, vapor phase deposition method, and solid-phase method, as well as chemical methods such as sol-gel method and hydrothermal method. Physical methods often require more investment in equipment. High or high energy consumption, which is not conducive to saving costs and reducing energy consumption, while the ordinary solution method requires a certain temperature and pressure, the particle size of the product is difficult to control, the shape is irregular, the crystallinity is poor, and the process is relatively complicated

ZnS phosphors produced by traditional methods often have large particle sizes, often between several microns or even tens of microns, and the purity of the product is not high, which is not conducive to practical application

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