Photoresist removal method

Abstract

The invention discloses a photoresist removing method which includes: using a plasma process mainly containing oxygen to remove all the photoresist at the top of a dielectric layer and part of photoresist on the side wall of an etching opening; using a plasma process mainly containing oxygen and F or CL to remove the sputtering dielectric particles of the first step and part of the residual photoresist, after the first step, of the etching opening; using a plasma process mainly containing oxygen to remove all the residual photoresist, after the first step and the second step, of the etching opening. The method has the advantage that during etching opening forming, when part of the photoresist in the etching opening is removed during the intermediate step of plasma processing, the dielectric particles which are sputtered and deposited on the surface of the photoresist during plasma processing are removed at the same time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a method for removing photoresist. Background technique [0002] In the semiconductor manufacturing process, it is usually necessary to deposit an electrolyte material and form a photoresist pattern on the surface of the semiconductor device, and then etch the electrolyte material and selectively remove the photoresist formed on the semiconductor surface. [0003] At present, when removing the photoresist on the semiconductor surface, there are usually two methods: dry etching and wet etching. Among them, dry etching refers to the plasma generated by exposing the semiconductor surface to the gaseous state, which has a physical or chemical reaction with the photoresist, thereby removing the photoresist on the semiconductor surface. Dry etching is mostly used in submicron size Device etching. The so-called wet etching is liquid chemical reagents su...

AI Technical Summary

Problems solved by technology

Since the substrate 504 is in the reaction chamber, the removal figure 2 During the photoresist 112 process, the sputtered silicon particles will not only be deposited on the surface of the photoresist 113, but also the sputtered silicon particles may be deposited on the gas shower head 502, the surface of the lower electrode and the side surface of the reaction chamber. wall 509, thereby forming particles (particles), polluting the internal environment of the reaction chamber to a certain extent

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