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A kind of preparation method of znte doped with S

A technology of sodium tellurite and zinc acetate, which is applied in the direction of binary selenium/tellurium compounds, etc., can solve the problems of high vacuum degree, high cost, and low output, and achieve the effects of good dispersion, low cost, and high output

Inactive Publication Date: 2016-10-26
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Most of the existing doping of ZnTe adopts vacuum evaporation method or molecular beam epitaxy method, but these two methods require high vacuum degree, low output and high cost

Method used

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  • A kind of preparation method of znte doped with S
  • A kind of preparation method of znte doped with S
  • A kind of preparation method of znte doped with S

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1 mmol of sodium tellurite (Na 2 TeO 3 ) and 2mmol of zinc acetate powder were evenly mixed, placed in a polytetrafluoroethylene liner with a volume of 50 ml, and then added with 35 ml of ethanolamine (ie 2-hydroxyethylamine) solvent, stirred magnetically for 15 minutes, and sealed in a high-pressure reactor . Then the reactor was placed in an oven at 200 °C for 24 h. After the reaction, it was naturally cooled to room temperature, placed in a centrifuge for rapid precipitation (5500 rpm, 5 min), and the sediment was repeatedly washed with absolute ethanol and deionized water. The obtained deposits were dried in a vacuum oven at 60 °C for 6 h at a constant temperature, and finally the samples were obtained.

[0019] Such as figure 1 Shown is the XRD pattern of the resulting product. The results show that the obtained product is hexagonal wurtzite ZnTe, and its diffraction peaks are consistent with the PDF#37-1463 card.

[0020] Such as figure 2 Shown is the SEM ...

Embodiment 2

[0022] The sodium tellurite of 1mmol, the zinc acetate of 2mmol and the thiourea of ​​0.4mmol ((NH 2 ) 2 CS) were mixed evenly, and then placed in a polytetrafluoroethylene liner with a volume of 50 ml, and then 35 ml of ethanolamine was added, stirred magnetically for 15 minutes, and then sealed in a high-pressure reactor. Then the reactor was placed in an oven at 200 °C for 24 h. After the reaction, it was naturally cooled to room temperature, placed in a centrifuge for rapid precipitation (5500 rpm, 5 min), and the sediment was repeatedly washed with absolute ethanol and deionized water. The obtained deposits were dried in a vacuum oven at 60 °C for 6 h at a constant temperature, and finally the samples were obtained.

[0023] Such as image 3 Shown is the SEM image of the obtained product, and the doped particles have good dispersion. Figure 4 The energy dispersive X-ray spectroscopy (EDS) pattern of the obtained ZnTe nanoparticles shows that the S element is successf...

Embodiment 3

[0025] Mix 1mmol of sodium tellurite, 2mmol of zinc acetate and 0.05mmol of thiourea evenly, then put it in a 50ml polytetrafluoroethylene liner, then add 35ml of ethanolamine, stir it magnetically for 15min, and seal it under high pressure in the reactor. Then the reactor was placed in an oven at 180 °C for 24 h. After the reaction, it was naturally cooled to room temperature, placed in a centrifuge for rapid precipitation (5500 rpm, 5 min), and the sediment was repeatedly washed with absolute ethanol and deionized water. The obtained deposits were dried in a vacuum oven at 60 °C for 6 h at a constant temperature, and finally the samples were obtained.

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Abstract

The invention discloses a preparation method of S-doped ZnTe, which comprises the following step: in an ethanolamine solvent, reacting sodium tellurite, zinc acetate and thiocarbamide at 180-200 DEG C for 12-24 hours to obtain the S-doped ZnTe. The method is simple to operate, and has the advantages of low facility request, favorable repetitiveness, high primary yield and low cost; and the obtained S-doped ZnTe has favorable dispersivity, and the granular size is 50-100nm.

Description

technical field [0001] The invention belongs to the field of nano-semiconductor doping, and in particular relates to a preparation method of S-doped ZnTe. Background technique [0002] ZnTe is an important II-VI direct bandgap semiconductor material with a bandgap width of 2.26eV at room temperature. It is an important luminescent material with many luminescent properties such as photoluminescence, electroluminescence, sonoluminescence and so on. Based on the above properties, ZnTe can be used to make nonlinear optoelectronic devices, blue-green laser devices, photodetectors and nuclear radiation detectors, such as ultraviolet light-emitting diodes, injection lasers, sensors, flat panel displays, infrared window materials, solar cells and other fields. [0003] Most of the current doping of ZnTe adopts vacuum evaporation method or molecular beam epitaxy method, but these two methods require high vacuum degree, low output and high cost. Contents of the invention [0004] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04
Inventor 吴荣陈俊安史罗红危韦刘从刘洋孙言飞李锦
Owner XINJIANG UNIVERSITY