Transverse double-diffusion metal oxide semiconductor field effect transistor

Abstract

The invention discloses a transverse double-diffusion metal oxide semiconductor field effect transistor. According to the structure, the transverse double-diffusion metal oxide semiconductor field effect transistor comprises a first doping buried layer region located on the lower face of a drift region, a second doping buried layer region arranged with a periodical partitioning drift region in a spaced mode and a third doping buried layer region located on the upper face of the drift region. The drift region bears the charge balance action of the doping buried layers on the periphery and high puncture voltage can be obtained; due to the fact that the concentration of the drift region is increased through heavy doping buried layers, specific on resistance is reduced; due to the fact that the drift region bears action of the buried layers in the four directions, the puncture voltage and the specific on resistance can be optimized to the maximum degree.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a lateral double-diffused metal oxide semiconductor field effect transistor structure. Background technique [0002] Lateral Double-diffused MOSFET (LDMOS for short) has become a key device in the design of intelligent power integrated circuits and system-on-chip due to its advantages such as easy integration with low-voltage devices. Its main feature is that a relatively long lightly doped drift region is added between the base region and the drain region. The doping type of the drift region is consistent with that of the drain region. By adding the drift region, it can share the breakdown voltage. Improve the breakdown voltage of LDMOS. The optimization goal of LDMOS is low on-resistance, which minimizes conduction losses. [0003] The idea of ​​a vertical double-doped MOS field effect transistor based on a superjunction was proposed to improve the contrad...

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Problems solved by technology

Minimizing conduction loss through low on-resistance is a very desirable performance in LDMOS (Lateral Double-Diffused MOS Field Effect Transistor), but in SJ-LDMOS, due to the defect of substrate-assisted depletion, and the LDMOS drift region uses The direction of the electric field optimization method is often two directions or three directions in the previous structure, which cannot optimize the electric neutrality

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