Epitaxial structure of a light-emitting diode
A technology of light-emitting diodes and epitaxial structures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost and restrictions on the application of high-voltage light-emitting diodes, and achieve the effects of reducing the number, increasing power and voltage, and good development prospects
Active Publication Date: 2017-05-03
HC SEMITEK SUZHOU
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Problems solved by technology
Due to the high cost of high-voltage LED chips, many lighting manufacturers prefer to use packaged low-power nitride light-emitting diodes in series instead of high-power LED chips, which greatly restricts the application of high-voltage light-emitting diodes.
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[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0029] see figure 1 , providing an epitaxial structure of a light emitting diode for an embodiment of the present invention. The epitaxial structure of light-emitting diodes is prepared by vapor deposition of metal-organic compounds. The epitaxial structure of the light-emitting diode includes a substrate layer 101, a first n-type gallium nitride layer 102, a first quantum well layer 103, a first p-type gallium nitride layer 104, a tunnel junction layer, a second n-type nitrogen GaN layer 108 , second quantum well layer 109 and second p-type GaN layer 110 .
[0030] In this embodiment, there is one tunnel junction layer, which is used to connect the PN junction layers on both sides thereof. see figure 2 , it can also be a structur...
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The invention discloses an epitaxial structure of a light emitting diode. The epitaxial structure comprises a substrate layer, a first n-type gallium nitride layer, a first quantum well layer, a first p-type gallium nitride layer, a tunneling junction layer, a second n-type gallium nitride layer, a second quantum well layer and a second p-type gallium nitride layer which are successively stacked. The tunneling junction layer comprises a p++ gallium nitride layer, a modulation silicon-doped indium gallium nitride layer and an n+ gallium nitride layer which are successively stacked. The p++ gallium nitride layer is attached to the first p-type gallium nitride layer, and the n+ gallium nitride layer is attached to the second n-type gallium nitride layer in a stacked covering mode. Compared to a conventional LED chip, the epitaxial structure of the light emitting diode has the following advantages: the power and voltage of a single chip crystal grain are increased, the use cost of a substrate is reduced, and the chip manufacturing process is even simplified. The epitaxial structure of the light emitting diode has quite large advantages in replacing or optimizing a conventional high-voltage nitride light emitting diode.
Description
technical field [0001] The invention relates to the field of semiconductor devices, in particular to an epitaxial structure of a light emitting diode. Background technique [0002] With the development of LED lighting technology, high-voltage light-emitting diode (LED) chips have become an indispensable part of the market. The high-voltage LED chip is made by dividing the epitaxial layer of the chip into small grain units, and connecting them in series by means of chip technology, thus showing the characteristics of high voltage and low current. Due to the high cost of high-voltage LED chips, many lighting manufacturers prefer to use packaged low-power nitride light-emitting diodes in series instead of high-power LED chips, which greatly restricts the application of high-voltage light-emitting diodes. Contents of the invention [0003] In order to overcome the above problems, an embodiment of the present invention provides an epitaxial structure of a light emitting diode,...
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IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/0075H01L33/06H01L33/08H01L33/32
Inventor 冉思涵董彬忠王江波
Owner HC SEMITEK SUZHOU