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Nitride semiconductor light-emitting element and method for producing same

A technology of nitride semiconductors and light-emitting elements, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as shape defects, unclear LED luminous intensity repetition cycles, etc., achieve excellent luminous efficiency, improve luminous efficiency effect

Active Publication Date: 2014-09-10
SHARP KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it is also unclear whether the luminous intensity of LEDs depends on the number of repeated cycles in the SLS structure
[0007] On the other hand, it is known that the nitride semiconductor structure has a shape defect called V pit (V pit, V-shaped pit)

Method used

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  • Nitride semiconductor light-emitting element and method for producing same
  • Nitride semiconductor light-emitting element and method for producing same
  • Nitride semiconductor light-emitting element and method for producing same

Examples

Experimental program
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Embodiment approach 1

[0068]

[0069] Figure 6 (a) is a schematic cross-sectional view of a nitride semiconductor light emitting device according to an embodiment of the present invention, Figure 6(b) is an enlarged cross-sectional view of a main part of the nitride semiconductor light emitting element according to this embodiment. In the nitride semiconductor light-emitting element according to this embodiment, a buffer layer 11, a base layer 12, an n-type nitride semiconductor layer 13, a trigger layer 14, a V-shaped pit expansion layer 15, an MQWs layer 16, p-type nitride semiconductor layer 17 . A p-side electrode 19A is provided on the p-type nitride semiconductor layer 17 via the transparent electrode 18 . A part of the upper surface of the n-type nitride semiconductor layer 13 is exposed by etching, and the n-side electrode 19B is provided on the exposed part.

[0070]

[0071] The substrate 10 may be, for example, an insulating substrate made of sapphire, or may be a conductive sub...

Embodiment approach 2

[0122] Figure 7 (a) is a schematic cross-sectional view of a nitride semiconductor light emitting element according to Embodiment 2 of the present invention, Figure 7 (b) is an enlarged cross-sectional view of a main part of the nitride semiconductor light emitting element according to this embodiment. The nitride semiconductor light-emitting device according to this embodiment has basically the same structure as the nitride semiconductor light-emitting device according to Embodiment 1 except that it has three activation layers. Hereinafter, differences from Embodiment 1 described above will be mainly described.

[0123] like Figure 7 As shown in (b), the nitride semiconductor light emitting element according to this embodiment has three trigger layers 24 , and an interlayer 25 is provided between adjacent trigger layers 24 . By providing two or more activation layers 24 in this way, the number of V-shaped pits 31 is more than that of the above-mentioned first embodiment...

Embodiment 1

[0129] In Example 1, the nitride semiconductor device according to Embodiment 1 above was produced and evaluated.

[0130] On a c-plane sapphire substrate with a flat surface, a 25nm GaN buffer layer was grown by MOVPE under the conditions of a pressure of 100kPa, a temperature of 460°C, and a V / III ratio of 40677. Next, under the conditions of a temperature of 1150°C and a V / III ratio of 2536, a 2.4 μm undoped GaN layer was grown. The carrier gas is H 2 . Next, grow a Si-doped n-type GaN layer of 2.5 μm. The n-type doping concentration is 4.41×10 18 cm -3 .

[0131] Under the conditions of reducing the growth temperature to 820°C and the ratio of V / III to 6517, a layer of Si-doped In x Ga 1-x A trigger layer (thickness 2.5 nm) composed of N (x=0.09). The n-type doping concentration in the trigger layer is 6×10 17 cm -3 , the carrier gas is N 2 .

[0132] Then, keep the growth temperature constant, and the V / III ratio is 28630. Under this condition, a V-shaped pit ...

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Abstract

This nitride semiconductor light-emitting element is configured so as to be provided with, in the following order, an n-type nitride semiconductor layer (13), a trigger layer (14), a V-pit expansion layer (15), a light-emitting layer (16) and a p-type nitride semiconductor layer (17). A V pit (31) is formed in the light-emitting layer. The trigger layer (14) comprises a nitride semiconductor material having a lattice constant that differs to that of the material constituting the top surface of the n-type nitride semiconductor layer (13). The V pit expansion layer (15) comprises a nitride semiconductor material having a lattice constant that is substantially the same as that of the material constituting the top surface of the n-type nitride semiconductor layer (13), and has thickness of 5nm to 5000 nm.

Description

technical field [0001] The present invention relates to a nitride semiconductor light-emitting element and a manufacturing method thereof. Background technique [0002] Nitrogen-containing III-V compound semiconductors (hereinafter referred to as "nitride semiconductors") have a bandgap energy equivalent to the energy of light with wavelengths from the infrared region to the ultraviolet region, and therefore, can be used as emitted light with wavelengths ranging from A material for a light-emitting element in the infrared region to an ultraviolet region, or a material for a light-receiving element in which the wavelength of light received is within this range. [0003] In addition, due to the strong bond between the atoms that make up the nitride semiconductor, its insulation breakdown voltage is high, and the velocity of saturated electrons is relatively high. Therefore, the nitride semiconductor can also be used as an electronic device such as a high-temperature resistant,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/06H01L33/22
CPCH01L33/08H01L33/0025H01L33/24H01L33/0075H01L21/02107H01L33/32H01L33/06
Inventor 柏原博之冈田成仁只友一行泷口治久
Owner SHARP KK