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A method for testing phase change memory thermal crosstalk

A phase-change memory and phase-change memory technology, applied in static memory, instruments, etc., can solve the problems of measuring thermal crosstalk, not proposing experimental methods, models and theories without experimental data support, etc.

Active Publication Date: 2017-05-10
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, there are still relatively few studies on the thermal crosstalk between phase change memory cells, and the proposed models and theories are not supported by experimental data, and no definite experimental methods have been proposed to measure thermal crosstalk.

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  • A method for testing phase change memory thermal crosstalk
  • A method for testing phase change memory thermal crosstalk
  • A method for testing phase change memory thermal crosstalk

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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0024] figure 1 It is a structural block diagram of adjacent phase-change memory cells tested for thermal crosstalk according to the present invention. The figure includes two adjacent phase change memory cells in the phase change memory array, the programmed cell 11 and its adjacent cell 12 . Both phase-change memory cells are composed of an upper electrode 101 , a phase-change material layer 102 and a lower electrode 103 . The excitation signal is applied to the programmed cell 11 and the adjacent cell 12 is tested at the same time.

[0025] The essence of this test method is to use the storag...

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Abstract

The invention discloses a thermal crosstalk testing method of a phase change memory. According to the method, a phase change material in a phase change memory unit is used as a temperature detector, by applying an excitation signal onto one phase change memory unit and applying a testing signal onto another adjacent phase change memory unit, a response signal on the adjacent phase change memory unit is acquired, the influence of thermal crosstalk to the adjacent phase change memory units in the programming process is measured according to the difference of electric performance and properties of the phase change material at different temperatures, and thus the thermal crosstalk stability of the phase change memory is evaluated. The method is applicable to an ordinary phase change memory unit structure, no other components need to be integrated, and the reliability of thermal crosstalk testing is improved.

Description

technical field [0001] The invention belongs to the field of microelectronic devices, and more specifically relates to a thermal crosstalk testing method of a phase change memory. Background technique [0002] Phase-change memory (PCRAM) is a new type of non-volatile memory with the fastest development at present. It stores information by using the resistance values ​​of phase-change materials in the crystalline state and the amorphous state, which are characterized by great differences. In the existing storage technology, phase change memory has the advantages of high-speed reading, high erasable times, radiation resistance, non-volatility, small element size, multi-level storage, and good compatibility with CMOS technology , is considered by the International Semiconductor Industry Association to be the most likely to replace the current flash memory and become one of the mainstream products of future memory, and it is also the first next-generation memory device that may ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/02
Inventor 李震刘畅赖志博缪向水程晓敏
Owner HUAZHONG UNIV OF SCI & TECH