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Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof

A zinc oxide nanometer and nanosheet technology, applied in zinc oxide/zinc hydroxide, nanotechnology, nanotechnology and other directions, can solve problems such as high control conditions and complex preparation process, and achieve less equipment investment, simple process and single equipment. Effect

Inactive Publication Date: 2015-07-08
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] There are many preparation methods for nanomaterials such as zinc oxide nanowires and nanosheets, but the requirements for control conditions are relatively high, and the preparation process is relatively complicated.

Method used

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  • Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof
  • Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof
  • Low-dimensional zinc oxide nano material and low-temperature plasma preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] First, a zinc film with a thickness of 150 nm was obtained by sputtering on a silicon substrate for 10 min at a power of 70 W by magnetron sputtering. Place the silicon substrate coated with zinc film in the center of the quartz tube of the tube furnace, evacuate to below 5Pa, heat the tube furnace, and turn on the radio frequency power supply when the temperature rises to 390°C after 20 minutes, and adjust the current to 1.2A , keep for 30min, during which time maintain the plasma glow discharge. After 30 minutes of deposition, the RF power was turned off, and the system began to cool down to room temperature.

[0032] (1) It is best to prepare nanosheets under the condition that the ratio of oxygen atmosphere and argon atmosphere is 3sccm: 44sccm, such as figure 2 shown.

Embodiment 2

[0034] First, a zinc film with a thickness of 1000 nm was obtained by sputtering on a silicon substrate for 70 min at a power of 70 W by magnetron sputtering. Place the silicon substrate coated with zinc film in the center of the quartz tube of the tube furnace, evacuate to below 5Pa, heat the tube furnace, and turn on the radio frequency power supply when the temperature rises to 390°C after 20 minutes, and adjust the current to 1.2A , keep for 30min, during which time maintain the plasma glow discharge. After 30 minutes of deposition, the RF power was turned off, and the system began to cool down to room temperature.

[0035] (1) It is best to prepare nanowires under the condition that the ratio of oxygen atmosphere to argon atmosphere is 12sccm: 24sccm, such as image 3 shown.

Embodiment 3

[0037] First, a zinc film with a thickness of 300 nm was obtained by sputtering on a silicon substrate for 50 min at a power of 30 W by magnetron sputtering. Place the silicon substrate coated with zinc film in the center of the quartz tube of the tube furnace, evacuate to below 5Pa, heat the tube furnace, and turn on the radio frequency power supply when the temperature rises to 390°C after 20 minutes, and adjust the current to 0.5A , keep for 30min, during which time maintain the plasma glow discharge. After 30 minutes of deposition, the RF power was turned off, and the system began to cool down to room temperature.

[0038] (1) It is best to prepare nanosheets under the condition that the ratio of oxygen atmosphere and argon atmosphere is 3sccm: 44sccm, such as figure 2 shown.

[0039] (2) The nanowires are prepared under the condition that the ratio of oxygen atmosphere and argon atmosphere is 5sccm: 24sccm, such as image 3 shown.

[0040] In addition, when the proce...

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Abstract

The invention discloses a low-dimensional zinc oxide nano material and a low-temperature plasma preparation method thereof. The preparation method comprises the following steps: (1) depositing a layer of a zinc thin film on a silicon slice substrate by using magnetron sputtering; (2) putting a silicon slice coated with the zinc thin film into a low-temperature plasma enhanced horizontal tube furnace deposition system, performing plasma discharge treatment under the conditions of different gas atmosphere proportions after the silicon slice is put into the system, and controlling different treatment temperatures and discharge currents to obtain the zinc oxide nano material with different shapes and appearances. The zinc oxide nano material prepared by using the method disclosed by the invention is low in material growth temperature, good in quality of the grown nano material, simple in process, low in cost and stable in product performance, and has broad prospects in the photovoltaic field and the application field of gas detectors.

Description

technical field [0001] The invention specifically relates to a low-dimensional zinc oxide nanometer material and a low-temperature plasma preparation method thereof. Background technique [0002] With the development of science and technology, semiconductor materials are playing an increasingly important role in the progress of social science and technology, especially the development of various thin films in recent years, which has greatly promoted the rapid development and upgrading of semiconductor nano-thin films. Zinc oxide is a wide bandgap oxide semiconductor material. As a direct bandgap material with wurtzite structure, its bandgap width is 3.36eV ​​at room temperature. It is one of the research materials for purple and blue electronic devices. At the same time, as a semiconductor, zinc oxide is increasingly showing its important role and advantages in the application of gas detectors, photoelectric devices and photocatalysis. Since the first discovery that zinc ox...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00
Inventor 程其进陈文志冯嘉郑将辉张凤燕云大钦吴洁阳
Owner XIAMEN UNIV