Check patentability & draft patents in minutes with Patsnap Eureka AI!

Liner Assembly And Substrate Processing Apparatus Having Same

A technology for processing equipment and assemblies, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., and can solve problems such as the influence of plasma uniformity

Active Publication Date: 2014-09-24
CHARM ENG CO LTD
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When equipped with an exhaust device on the side surface of the chamber, there is a limitation in keeping the internal pressure of the chamber uniform
Also, when several components are inserted into the chamber, the plasma uniformity may be affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Liner Assembly And Substrate Processing Apparatus Having Same
  • Liner Assembly And Substrate Processing Apparatus Having Same
  • Liner Assembly And Substrate Processing Apparatus Having Same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Hereinafter, specific embodiments will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0034] figure 1 is a cross-sectional view illustrating the substrate processing apparatus according to the first embodiment, and figure 2 with image 3 is a cross-sectional view illustrating the substrate processing apparatus according to the second and third embodiments.

[0035] see figure 1, the substrate processing apparatus according to the first embodiment may include: a chamber 100 having an inner space for processing a substrate S; a substrate supporting unit 200 disposed inside the chamber 100 for fixing the substrate S supported thereon; and a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Description

technical field [0001] The present invention relates to a substrate processing device, in particular to a gasket assembly capable of improving processing uniformity and a substrate processing apparatus including the gasket assembly. Background technique [0002] In general, semiconductor processes are performed to manufacture semiconductor devices, display devices, light emitting diodes, or thin film solar cells. That is, a certain stack structure is formed by repeatedly performing the following processes: a film deposition process that deposits thin films of a specific material on a substrate, an optical process that exposes selected regions of these films using a photosensitive material, and Selectively remove the film to perform a patterned etch process. [0003] A chemical vapor deposition (Chemical Vapor Phase Deposition, CVD) method may be used for the thin film deposition process. In the CVD method, a raw material gas supplied into a reaction chamber causes a chemic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455H01J37/32H01L21/67
CPCC23C16/45565C23C16/4412C23C16/452H01J37/32C23C16/4401C23C16/45559C23C16/509H01J37/32477H01J37/32495H01J37/32816H01L21/205C23C16/505C23C16/513H01J37/32091H01J37/3244
Inventor 徐映水韩泳琪李埈爀辛宇植明鲁善
Owner CHARM ENG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More