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An Analysis Method for Integrated Circuit Defects

An analysis method and integrated circuit technology, applied in the direction of analyzing materials, material analysis by optical means, measuring devices, etc., can solve problems such as inability to solve resources and waste, and achieve the effect of reducing the increase in production costs and reducing the waste of resources

Active Publication Date: 2017-10-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Although the method of this patent has divided and planned the defects, it does not involve the sampling and pre-analysis of the characteristic signals of various defects, which cannot solve the above-mentioned problem of waste of resources

Method used

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  • An Analysis Method for Integrated Circuit Defects
  • An Analysis Method for Integrated Circuit Defects
  • An Analysis Method for Integrated Circuit Defects

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Embodiment Construction

[0035] The invention discloses an analysis method for integrated circuit defects. image 3 It is a flow chart of the method of the present invention, as image 3 As shown, S1: provide a wafer with several defects on the wafer; S2: detect the wafer through an optical defect detection device (not shown in the figure) and identify the defect characteristic signal in each defect to obtain a wafer In the circular defect distribution file, the defect characteristic signal identified in each defect is written into the wafer defect distribution file through the wafer defect detection equipment. The defect characteristic signal is an algorithm. Specifically, through the optical defect detection device The microscope observes the wafer and obtains the optical image on the wafer, and then converts the optical image on the wafer into a data image represented by different bright and dark gray scales ( figure 1 shown), and then obtain the position of the defect by comparing the characteris...

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Abstract

The invention discloses an analysis method for integrated circuit defects, which obtains a wafer defect distribution file and a wafer defect general distribution map through optical defect detection equipment, and samples different types of defect characteristic signals to generate a defect pre-analysis distribution map, and Use the electron microscope to quickly analyze the true and false defects of the defect pre-analysis distribution map, and then select the number of morphology analysis of all defects on the wafer in a targeted manner, and finally obtain a more realistic defect type distribution map .

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an analysis method for integrated circuit defects. Background technique [0002] In the prior art, the relatively advanced integrated circuit manufacturing process generally includes hundreds of steps, and a small error in any link will lead to the failure of the entire chip, especially as the critical size of the circuit continues to shrink, its influence on process control The stricter the requirements, so in the actual production process, in order to find and solve problems in time, it is necessary to configure high-sensitivity optical defect detection equipment for online detection of products. [0003] The basic working principle of defect detection is to convert the optical image on the chip into a data image represented by different bright and dark gray scales. figure 1 It is a schematic diagram of converting the optical image of the circuit into a data grayscal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/956H01L21/66
Inventor 倪棋梁陈宏璘龙吟
Owner SHANGHAI HUALI MICROELECTRONICS CORP