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Organic light-emitting diode and preparation method thereof

An electroluminescence device and luminescence technology, applied in the direction of organic semiconductor devices, organic semiconductor device materials, electric solid devices, etc., can solve the problems of low luminous efficiency, achieve good film forming performance, improve light extraction efficiency, and improve regeneration effect of ability

Inactive Publication Date: 2014-10-01
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the luminous efficiency of organic electroluminescent devices is low at present

Method used

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  • Organic light-emitting diode and preparation method thereof
  • Organic light-emitting diode and preparation method thereof
  • Organic light-emitting diode and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0036] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:

[0037] Step S110 , sequentially vapor-depositing the hole injection layer 20 , the first hole transport layer 32 , the first light emitting layer 34 and the first electron transport layer 36 on the surface of the anode.

[0038] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO), preferably ITO.

[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .

[0040] The hole injection layer 20 is formed on the s...

Embodiment 1

[0056] The structure prepared in this example is ITO / WO 3 / TAPC / BCzVBi / TPBi / CsN 3 :PrO 2 / UGH2:MoO 3 / TCTA / BCzVBi / Bphen / LiF / Ag organic electroluminescence device.

[0057] First carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; evaporate the hole injection layer , the material is WO 3 , the thickness is 40nm; evaporate the first hole transport layer, the material is TAPC, the thickness is 25nm; evaporate the first light-emitting layer, the material is BCzVBi, the thickness is 30nm; evaporate the first electron transport layer, the material is TPBi, the thickness is 60nm; evaporated charge generation layer, n-type layer is CsN 3 :PrO 2 , where CsN 3 with PrO 2 The mass ratio is 7:20, the thickness is 15nm, and the p-type layer is UGH2:MoO 3 , UGH2 and MoO 3 The mass ratio of the mass rat...

Embodiment 2

[0062] The structure prepared in this example is AZO / V 2 o 5 / TCTA / ADN / TPBi / Cs 2 CO 3 :Pr 2 o 3 / UGH1:WO 3 / NPB / ADN / Bphen / CsN 3 / Pt organic electroluminescent devices.

[0063] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was V 2 o 5 , the thickness is 80nm; the first hole transport layer is prepared by evaporation, the material is TCTA, and the thickness is 60nm; the first light-emitting layer is prepared by evaporation, the material is ADN, and the thickness is 5nm; the first electron transport layer is prepared by evaporation, and the material is TPBi, thickness 200nm; evaporated charge generation layer, n-type layer is Cs 2 CO 3 :Pr 2 o 3 , where Cs 2 CO 3 with Pr 2 o 3 The mass ratio is 3:5, the thickness is 30nm, and the p-type layer is UGH1:WO 3 , UGH1 and WO 3 The mass rat...

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Abstract

An organic light-emitting diode comprises a positive pole, a hole injection layer, a first hole transport layer, a first light-emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a second light-emitting layer, a second electron transport layer, an electron injection layer and a negative pole which are stacked in sequence. The charge generation layer comprises an n-type layer and a p-type layer. An n-type layer material comprises a lanthanide oxide and a cesium salt doped in the lanthanide oxide, a p-type material comprises a metal oxide and organic silicon molecules doped in the metal oxide, and the organic light-emitting diode is high in light-emitting efficiency. The invention further provides a preparation method for preparing the organic light-emitting diode.

Description

technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The luminescence principle of organic electroluminescent devices is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied molecular orbital (HOMO) of organic matter. Electrons and holes meet, recombine, and form excitons in the light-emitting layer. Excitons migrate under the action of an electric field, transfer energy to the light-emitting material, and excite electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to generate photons , releasing light energy. However, the luminous efficiency of organic electroluminescent devices is relatively low at present. Contents of the invention [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K30/865H10K50/131H10K50/18H10K2102/00H10K71/00
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD