A trench isolated igbt device
A trench isolation and device technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as increasing IGBT on-voltage, reduce on-voltage drop, optimize on-voltage and off-loss tradeoff characteristics Effect
Active Publication Date: 2017-10-10
JIANGSU CAS IGBT TECHNOLOGY CO LTD
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Problems solved by technology
The reduction of plasma concentration leads to a large voltage drop on the N-base region near the front side, thus increasing the turn-on voltage of the IGBT
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Embodiment Construction
[0018] see figure 2 , a trench isolation IGBT device provided by an embodiment of the present invention, comprising: a P-type active base region, a trench gate electrode, a P-type redundant base region, an isolation trench, and a P-type main junction; a P-type active base The area includes: N+ source area and P-type base area; the P-type redundant base area includes: the second P-type base area; the P-type main junction includes: P+ substrate; the P-type redundant base area is set on two P-type active Between the base regions, it can block the movement of holes and maintain the plasma concentration of the N-base region, thereby reducing the conduction voltage drop; it is set between two adjacent P-type active base regions and P-type redundant base regions A trench gate electrode; an isolation trench is set between the P-type redundant base region and the P-type main junction.
[0019] In terms of electrical connection, the P-type redundant base region is directly connected t...
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The invention belongs to the technical field of power semiconductor devices, and discloses a trench isolation IGBT device. The trench isolation IGBT device comprises P type active base regions, a trench gate electrode, a P type redundancy base region, an isolation trench and a P type main junction. Each P type active base region comprises an N+ source region and a P type base region. The P type redundancy base region comprises a second P type base region. The P type main junction comprises a P+ substrate, and the P type redundancy base region is arranged between the two P type active base regions. The trench gate electrode is arranged between the two adjacent P type active base regions and the P type redundancy base region. The isolation trench is arranged between the P type redundancy base region and the P type main junction. According to the trench isolation IGBT device, the P type redundancy base region is arranged so that the blocking effect on holes can be improved, the plasma concentration is maintained, drop voltages are lowered, and therefore the compromise features of break-over voltages and turn-off loss are optimized.
Description
technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to a trench isolation IGBT device. Background technique [0002] Insulated gate bipolar transistor (IGBT) is widely used as a power switch in power electronic systems. The turn-on voltage drop and turn-off loss are the key parameters that affect the IGBT in the working state. The lower the conduction voltage drop, the smaller the power loss of the IGBT in the conduction state. The smaller the off time, the lower the power loss during the switching process of the IGBT from on to off. see figure 1 , in the conduction state, carriers are injected from the front MOS channel and the back collector and form a large number of carriers in the N-base region of the IGBT: electrons and holes, this region is electrically neutral; thereby reducing The resistance of the base region in turn reduces its conduction voltage drop. On the other hand, during the switching proces...
Claims
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IPC IPC(8): H01L29/739H01L29/06H01L29/10
CPCH01L29/0649H01L29/66348H01L29/7397
Inventor 胡爱斌张杰赵佳王海军吴凯
Owner JIANGSU CAS IGBT TECHNOLOGY CO LTD