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Ag alloy film to be used as reflecting film and/or transmitting film or as electrical wiring and/or electrode, ag alloy sputtering target, and ag alloy filler

A technology of electrical wiring and alloy film, applied in the field of Ag alloy film used for reflective film and/or transmissive film, or used for electrical wiring and/or electrode, and Ag alloy sputtering target and Ag alloy filler, can solve the problem of Excellent durability, excellent adhesion, and excellent productivity are achieved without problems such as cloudiness

Inactive Publication Date: 2014-10-08
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, when the above-mentioned Ag alloy film is applied to, for example, wiring and electrodes in a touch panel, there is a problem that the above-mentioned cloudiness is likely to occur due to differences in the use environment of the device, etc.

Method used

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  • Ag alloy film to be used as reflecting film and/or transmitting film or as electrical wiring and/or electrode, ag alloy sputtering target, and ag alloy filler
  • Ag alloy film to be used as reflecting film and/or transmitting film or as electrical wiring and/or electrode, ag alloy sputtering target, and ag alloy filler

Examples

Experimental program
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Effect test

Embodiment 1

[0056] On a glass substrate (Dow Corning's non-alkali glass #1737, diameter: 50 mm, thickness: 0.7 mm), a pure Ag film or an Ag film having the composition shown in Table 1 was formed by sputtering using a DC magnetron sputtering device. Alloy films (both film thicknesses are 100nm, single-layer film) are formed. The film-forming conditions at this time are as follows.

[0057] (film forming conditions)

[0058] Substrate temperature: room temperature

[0059] Film forming power: DC15W / cm 2

[0060] Ar pressure: 1~3mTorr

[0061] Electrode spacing: 55mm

[0062] Film forming speed: 7.0~8.0nm / sec

[0063] Ultimate vacuum degree: 1.0×10 -5 Below Torr

[0064] In addition, in the above film formation, as a sputtering target, a pure Ag target (when forming a pure Ag film) or an Ag alloy having the same composition as the film composition shown in the following Table 1 prepared by a vacuum melting method was used. Sputtering targets (targets all 4 inches in diameter). In ...

Embodiment 2

[0083] On a glass substrate (Dow Corning's non-alkali glass #1737, diameter: 50 mm, thickness: 0.7 mm), use a DC magnetron sputtering device to form a pure Ag film or an Ag alloy with the composition shown in Table 2 by sputtering. Films (both film thicknesses are 100nm, single-layer film) are formed into films. The film-forming conditions at this time are as follows.

[0084] (film forming conditions)

[0085] Substrate temperature: room temperature

[0086] Film forming power: DC2.55W / cm 2

[0087] Ar gas pressure: 1.9Pa

[0088] Electrode spacing: 120mm

[0089] Ultimate vacuum degree: 4.0×10 -5 Below Pa

[0090] In addition, in the above film formation, as the sputtering target, a pure Ag target (in the case of forming a pure Ag film) or an Ag alloy having the same composition as the film composition shown in Table 2 below prepared by a vacuum melting method was used. Sputtering targets (targets all 4 inches in diameter). In addition, in No. 15-17 and 22 of Table ...

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Abstract

The present invention provides an Ag alloy film which exhibits a low-level electrical resistivity nearly equivalent to that of a pure Ag film and which is superior to a conventional Ag alloy film in durability (specifically, resistances to salt water and halogen) and in the adhesion to a substrate. Further, the film formation rate in forming this Ag alloy film by sputtering is as high as that in forming a pure Ag film by sputtering. The present invention is an Ag alloy film useful as a reflecting film and / or a transmitting film or as an electrical wiring and / or an electrode, said Ag alloy film containing 0.1 to 1.5 at% of at least one element selected from the group consisting of Pd, Au and Pt and 0.02 to 1.5 at% of at least one element selected from the group consisting of at least one rare earth element, Bi and Zn with the balance being Ag and unavoidable impurities.

Description

technical field [0001] The present invention relates to an Ag alloy film used for reflective film and / or transmissive film, or used for electrical wiring and / or electrode, and an Ag alloy sputtering target and Ag alloy filler for forming the above-mentioned Ag alloy film. In detail, it relates to the following Ag alloy film: exhibiting a low resistivity almost at the same level as a pure Ag film, and being excellent in durability such as salt water resistance, and when the above-mentioned Ag alloy film is preferably formed by a sputtering method, it can be Films are formed at a relatively fast sputtering film formation rate comparable to that of pure Ag. Background technique [0002] Since the pure Ag film exhibits high reflectance to visible light and ensures low resistance above a certain film thickness, it is expected to be applied to thin-film transistor (TFT) substrates of electronic devices such as display devices, touch panels, solar cells, and light-emitting displays...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/06B22F1/00C23C14/14C23C14/34H01B5/00H01B5/14H01B7/08B22F1/054
CPCC22C1/0466B82Y30/00C22C5/06H01B1/023B22F1/0018C23C14/3414C22C5/08B22F2301/255C23C14/165G02B5/26B22F1/054H01B1/02
Inventor 田内裕基志田阳子奥野博行
Owner KOBE STEEL LTD
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