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A kind of preparation method of high-purity gallium

A high-purity, metallic gallium technology, applied in the fields of process efficiency improvement, photographic technology, instruments, etc., can solve the problems of cumbersome preparation methods of high-purity gallium, achieve the effect of reducing process steps and reducing impurity concentration

Active Publication Date: 2017-02-15
CHINA SHENHUA ENERGY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a method for preparing high-purity gallium to solve the problem of complicated preparation methods for high-purity gallium in the prior art

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] As described above, the traditional extraction of high-purity gallium uses a single method, which often needs to be repeated many times in order to effectively improve the purity, but the improvement in purity is still limited, and impurities cannot be effectively reduced. Aiming at the shortcomings and deficiencies of the above prior art, in a typical embodiment of the present invention, a method for preparing high-purity gallium is provided. The preparation method includes: step S1, acidifying the crude gallium liquid under ultrasonic conditions Formula extraction to obtain metal gallium solution; step S2, electrolyzing the metal gallium solution to obtain a purified gallium solution; and step S3, using partial crystallization to crystallize the purified gallium solution to obtain high-purity gallium.

[0020] The above preparation method combines ultrasonic and acid extraction with electrolytic refining and partial crystallization, avoiding repeated repetition of a si...

Embodiment 1

[0032]First, put the 2N level crude gallium solution in a container in an ultrasonic oscillator, use hydrochloric acid with a concentration of 4mol / L to acid-extract the gallium in the crude gallium solution, control the extraction temperature to 50°C with a water bath, and the ultrasonic frequency The extraction is 50KHz, the power is 60W, and the extraction lasts for 30 minutes to obtain gallium metal liquid. The gallium metal liquid is detected by glow discharge mass spectrometry (GD-MS), and it is found that the purity of gallium has increased to 3N level, and the concentration of Fe is lower than 150ppm. The concentration of Cu is less than 5ppm, and the concentration of As is less than 120ppm.

[0033] Then, the gallium metal liquid obtained in the above steps is placed in an electrolytic cell for electrolysis, the reaction temperature is controlled at 50° C. by a water bath, platinum is used as a cathode, platinum treated by inserting a liquid metal gallium pool is used ...

Embodiment 2

[0036] First, place the 2N level crude gallium solution in a container in an ultrasonic oscillator, use hydrochloric acid with a concentration of 1mol / L to perform acid extraction of gallium in the crude gallium solution, and control the acid extraction temperature to 40°C with a water bath. The ultrasonic frequency is 40KHz, the power is 60W, the acid extraction lasts for 60 minutes, and the gallium metal liquid is obtained. Glow discharge mass spectrometry (GD-MS) detection is performed on the gallium metal liquid, and it is found that the purity of gallium has increased to 3N level, and the concentration of Fe Below 150ppm, the concentration of Cu is below 10ppm, and the concentration of As is below 120ppm.

[0037] Then, the gallium metal liquid obtained in the above steps is placed in an electrolytic cell for electrolysis, the reaction temperature is controlled at 40° C. by a water bath, platinum is used as a cathode, platinum treated by inserting a liquid metal gallium po...

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Abstract

The invention provides a preparation method for high purity gallium. The preparation method comprises the following steps: step S1, conducting acid extraction on a coarse gallium liquid under the ultrasonic condition so as to obtain a metal gallium solution; step S2, conducting electrolysis purification on the metal gallium solution so as to obtain a purified gallium solution; step S3, utilizing a part crystallization method to conduct crystallization on the purified gallium solution so as to obtain the high purity gallium. Acid extraction is utilized to extract impurities in the coarse gallium liquid into an acid liquor to be separated from the metal gallium solution; then electrolysis purification is conducted on the metal gallium solution, wherein the metal gallium concentrates at the cathode, so as to obtain a purified gallium solution; then the part crystallization method is utilized to crystallize the purified gallium solution; the solidification point of the gallium is lower, so that in the crystallization process, part impurities are reserved in the purified gallium solution, and the solid-state gallium obtained in crystallization and solidification is the high purity gallium. According to the preparation method, the condition that a single step is repeatedly used is avoided, the process steps are reduced, the high purity gallium can be extracted, and the concentrations of various impurities are effectively reduced.

Description

technical field [0001] The invention relates to the field of gallium preparation, in particular to a method for preparing high-purity gallium. Background technique [0002] Gallium is dispersed in trace amounts in ores such as bauxite, copper sulfide and sphalerite in nature. Initially, gallium was often used to produce primary products such as low-melting point alloys and high-temperature thermometers. In recent years, research on gallium and its compounds has made outstanding progress in the semiconductor field. The excellent properties of gallium compounds represented by gallium arsenide and gallium nitride It is constantly being discovered and the scope of application is expanding, and it is widely used in optical systems, microwave communications, high-speed large-scale integrated circuits, solar cells, etc. [0003] According to the national standard (GB / T1475-2005), metal gallium with a purity of 4N-5N is usually called industrial gallium; and a purity of 6-7N is usu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B58/00C25C1/22
CPCY02P10/20
Inventor 申万张广军
Owner CHINA SHENHUA ENERGY CO LTD