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A USB flash drive and its working method

A working method and USB flash drive technology, applied in information storage, static memory, digital memory information, etc., can solve problems such as NANDFLASH block damage, data file failure, etc., and achieve the effect of prolonging the service life

Active Publication Date: 2017-03-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When data is written frequently, the number of writes may exceed the maximum number of writes to a certain page (PAGE) in a certain block of NAND FLASH in the storage medium of the USB flash drive, that is, exceed the limit of the number of times designed for the life of the chip, resulting in a certain block of NAND FLASH The damage of the page (PAGE), which in turn leads to the failure of the entire data file

Method used

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  • A USB flash drive and its working method
  • A USB flash drive and its working method
  • A USB flash drive and its working method

Examples

Experimental program
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Effect test

Embodiment

[0026] The USB shell adopts Shenzhen HMW model: HMW1863; the high-speed controller adopts CYPRESS model: CY7C68013A; the ferroelectric memory adopts RAMTRON model: FM22L16; the NAND FLASH adopts SUMSUNG model: K9F1208D0A.

[0027] In this example, the NAND FLASH capacity is 64MB (a total of 67108864 bytes), wherein each storage block defines a size of 4096 bytes (that is, the M value is 4096), and a total of 16384 storage blocks (that is, the N value is 16384).

[0028] In this example, the capacity of the ferroelectric memory is 512KB (524288 bytes in total). Among them, the block writing counter table occupies (32768 bytes=N*2), the starting address is from 0X0000 0000 to 0X0000 8000; the backup block area occupies (20500 bytes=(4+M)*5), and the starting address is from 0X0000 8001 to 0X0000 D014; backup block 1 is occupied (4100 bytes = (4+M)), the start address is from 0X0000 8001 to 0X0000 9004; backup block 2 is occupied (4100 bytes = (4+M)), the start The address is fr...

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Abstract

The invention discloses a flash disk and a working method thereof, and relates to the technical field of computer data storage. The flash disk comprises a flash disk shell, a USB interface, a high-speed controller, a ferroelectric memory and a NAND FLASH. The USB interface, the high-speed controller, the ferroelectric memory and the NAND FLASH are located in the flash disk shell. The USB interface is connected with the high-speed controller through a high-speed internal data bus, and the USB interface is provided with a data interface which is used for external connection and conforms to the USB2.0 interface electric standard. The high-speed controller is connected with the ferroelectric memory and the NAND FLASH through address / data buses, and the high-speed controller is in charge of operation and interface logic of all data. The ferroelectric memory has the function of a counter and the replacing function of a frequent write-in block, and the NAND FLASH is an actual storage medium of the flash disk shell. By means of the ferroelectric memory, the phenomenon that some blocks are repeatedly written in cannot occur, and then the service life of the flash disk is prolonged.

Description

technical field [0001] The invention relates to the technical field of computer data storage, in particular to a USB flash drive and a working method thereof. Background technique [0002] Traditionally, USB flash drives are used to store various data. When users use USB flash drives to store database data, whenever a record is created or deleted in the database, it is possible to modify the attributes of the database file, such as file size, last access time etc. This attribute information is often stored in a certain area of ​​the USB by the operating system. When data is written frequently, the number of writes may exceed the maximum number of writes to a certain page (PAGE) in a certain block of NAND FLASH in the storage medium of the USB flash drive, that is, exceed the limit of the number of times designed for the life of the chip, resulting in a certain block of NAND FLASH Page (PAGE) is damaged, which in turn leads to the failure of the entire data file. Files sim...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10
Inventor 王刚张禹瑄胡玮通
Owner JILIN UNIV