Preparation method for silicon nitride thin film

Abstract

The invention provides a preparation method for a silicon nitride thin film. The preparation method is carried out at an environmental temperature lower than 450 DEG C, and comprises the following steps: step 1, leading amino silane into a reaction chamber loaded with a wafer by taking inert gas as carrier gas; step 2, sweeping the surface of the wafer by using the inert gas; step 3, leading nitrogen plasma into the reaction chamber to perform nitridation to the amino silane on the surface of the wafer; step 4, repeating the step 1 to the step 4, so as to form the silicon nitride thin film with predetermined thickness. In the preparation method of the silicon nitride thin film, provided by the invention, the amino silane is taken as a reaction precursor to form the silicon nitride thin film under a low temperature condition, a better parameter range and optimized parameters for producing the silicon nitride thin film under the low temperature condition are given, the manufacturing of the silicon nitride thin film under the low temperature condition is achieved, and requirements of occasions requring the silicon nitride thin film can be met well.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits and its manufacture, in particular to a method for preparing a silicon nitride film. Background technique [0002] The ALD (Atomic Layer Deposition) process is widely used in the semiconductor industry due to its good step coverage. The pure ALD deposition method requires a higher temperature, while PEALD (Plasma Enhanced Atomic Layer Deposition) relies on plasma-driven reactions and does not have high requirements for temperature. At the same time, the quality of the grown film is comparable to that of high-temperature ALD. [0003] Growing silicon oxide films by PEALD is a relatively common process in the semiconductor industry, but currently there is no process for growing silicon nitride films under low temperature conditions. Therefore, it is an urgent problem to be solved by those skilled in the art to provide a method for preparing a silicon nitride film under low temperatu...

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Problems solved by technology

[0003] Growing silicon oxide films by PEALD is a relatively common process in the semiconductor industry, but there is currently no process for growing silicon nitride films under low temperature conditions

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