A charged multi-wire cutting method for silicon wafers and a charged multi-wire cutting device

Abstract

The invention discloses a method for electrified multi-wire cutting of silicon wafers. The method includes the steps: 1, bonding a silicon rod, namely fixing a glass plate, fixing an electroconductive adhesive tape and fixing the silicon rod; 2, wiring a direct-current power source, namely connecting the electroconductive adhesive tape with a cathode of the direct-current power source and connecting a pay-off wheel or a take-up wheel of a take-up and pay-off mechanism in a multi-wire cutting machine with an anode of the direct-current power source; 3, performing wire electrified cutting on the silicon rod, namely switching on the direct-current power source and adopting the multi-wire cutting machine to cut the silicon rod to be cut. The method is simple in step and convenient to realize, and multi-wire cutting efficiency of the silicon wafers is improved effectively through electrified cutting. In addition, the invention further discloses a device for electrified multi-wire cutting of the silicon wafers. The device comprises the direct-current power source, the electroconductive adhesive tape and the multi-wire cutting machine for cutting the silicon rod to be cut. The electroconductive adhesive tape is fixed in the middle of the undersurface of the silicon rod to be cut in a bonded manner. The device is simple in structure, reasonable in design, low in input cost, simple and convenient to use and operate and high in cutting efficiency and cutting quality.

Description

technical field [0001] The invention belongs to the technical field of wire cutting of silicon wafers, and in particular relates to a charged multi-wire cutting method and a charged multi-wire cutting device for silicon wafers. Background technique [0002] Multi-wire sawing is one of the most effective methods for cutting large-diameter silicon single crystal rods. In recent years, the multi-wire cutting machine (wire saw for short) that has sprung up suddenly has gradually replaced the inner circle cutting machine in the field of large-diameter silicon wafer processing because of its extremely high production efficiency and wafer output rate. Small degree, good parallelism, small total thickness tolerance (TTV) dispersion, small edge cutting loss, shallow surface damage layer, and small wafer surface roughness; its cutting materials cover various semiconductor materials, such as silicon, germanium, Lithium niobate, gallium arsenide, indium phosphide, artificial gemstones,...

AI Technical Summary

Problems solved by technology

The grooved wheel used in general wire cutting is mainly to coat a layer of epoxy resin on the surface of the metal main roller, and to carve grooves on the surface of the epoxy resin to achieve the required groove spacing. Therefore, the steel wire will exert downward pressure on the wire groove, which will cause the displacement of the wire mesh, which will not only affect the cutting quality, but also cause the cutting efficiency to be greatly reduced due to the need to stop the machine to reset the wire mesh.

In addition, when increasing the number of multi-wire cutting machines and the amount of consumables (that is, cutting mortar) used in the cutting process are used as a way to increase production capacity, a large amount of money must be invested, and the production cost will increase significantly.

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