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Composite semiconductor switch device

A compound semiconductor and switching device technology, which is used in electronic switches, output power conversion devices, regulating electrical variables, etc.

Inactive Publication Date: 2014-12-24
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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  • Composite semiconductor switch device
  • Composite semiconductor switch device

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Embodiment approach 1

[0030] according to figure 1 and figure 2 One embodiment of the present invention will be described. figure 1 is an overall view showing a composite semiconductor switch device according to an embodiment of the present invention, figure 2 is showing figure 1 A timing chart of the operation of the composite semiconductor switching device shown.

[0031] exist figure 1 Among them, the composite semiconductor switch device 1 includes a semiconductor switch unit 10 composed of switchable semiconductor elements, and a controller 20 that generates a control instruction signal for the semiconductor switch unit 10 .

[0032] The semiconductor switch unit 10 includes a first semiconductor element 11 made of SiC MOSFET, and a second semiconductor element 12 connected in parallel with the first semiconductor element 11 and made of Si IGBT having a higher switching loss than the first semiconductor element. In addition, the semiconductor switch unit 10 has a first gate terminal Ga ...

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Abstract

Provided is a composite semiconductor switch device which is equipped with: a first semiconductor element (11) with which switching loss occurs together with an ON / OFF switch operation; a second semiconductor element (12) which is connected in parallel with the first semiconductor element (11), and with which switching loss higher than that of the first semiconductor element (11) occurs together with the ON / OFF switch operation; and a controller (20) which, after applying a first ON instruction signal to the first semiconductor element (11), applies a second ON instruction signal to the second semiconductor element (12) and then cancels the first ON instruction signal, and, after applying a third ON instruction signal to the first semiconductor element (11), cancels the second ON instruction signal.

Description

technical field [0001] The present invention relates to compound semiconductor switching devices. Background technique [0002] Conventional composite semiconductor switching devices, as shown in the following patent document 1, connect metal oxide film semiconductor field effect transistors and insulated gate bipolar transistors in parallel to perform switching operations, thereby performing power conversion. In such switching circuits, metal The gate threshold voltage of the oxide film semiconductor field effect transistor is lower than that of the insulated gate bipolar transistor. [0003] That is, connect the IGBT and MOSFET in parallel, let the current flow through the MOSFET whose saturation voltage is lower than that of the IGBT when the current is small, share the current between the IGBT and the MOSFET when the current is medium, and make the current flow through the MOSFET whose saturation voltage is lower than the MOSFET when the current is large. flow through t...

Claims

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Application Information

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IPC IPC(8): H03K17/687H02M1/08H02M3/155H03K17/00H02M1/00
CPCH02M1/088H03K17/164H03K17/56H03K2217/0036H03K2217/0054H02M1/0054Y02B70/10H02M1/08H03K17/687
Inventor 石川纯一郎
Owner MITSUBISHI ELECTRIC CORP