Thin-wafer reverse-side metal sputtering method for reducing wafer breakage rate

Abstract

The invention discloses a thin-wafer reverse-side metal sputtering method for reducing wafer breakage rate. The thin-wafer reverse-side metal sputtering method is applicable to a process for growing a metal layer on a wafer and includes steps of firstly, spraying reaction gas to the wafers in advance before starting the thin-wafer reverse-side metal sputtering process, and slowly heating the wafers; secondly, starting the thin-wafer reverse-side metal sputtering process; thirdly, continuously jetting the reaction gas to the wafers after completing the thin-wafer reverse-side metal sputtering process, and slowly cooling the wafers. Before the thin-wafer reverse-side metal sputtering process is started, the reaction gas is ejected in advance, and the wafers are heated slowly. After the process is completed, the reaction gas is continuously emitted to the wafers flatly, then the wafers are cooled slowly after the process is completed, and the wafers are softly deformed in the whole process, so that the wafer breakage rate is decreased and is reduced from 1% of the prior art to 0.1%.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process method, in particular to a metal sputtering method on the back of a thin wafer for reducing the wafer damage rate. Background technique [0002] Thin wafer back side metal sputtering process is required for growing titanium, nickel alum and silver layers on the wafer. For thin wafer back side metal sputtering process, the main problem is wafer breakage. Such as figure 1 As shown, in the process of growing the metal layer on the wafer surface with the existing metal sputtering process on the back of the thin wafer, since the ambient temperature will have a large change at the beginning and end of each metal layer growth process, which will lead to Wafer bending changes, which is one of the main causes of wafer breakage. Using the existing process for metal sputtering on the back of the thin wafer, the breakage rate of the wafer reaches 1%. Contents of the invention [0003] The inventio...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, in the process of growing the metal layer on the wafer surface with the existing metal sputtering process on the back of the thin wafer, since the ambient temperature will have a large change at the beginning and end of each metal layer growth process, which will lead to Wafer bending changes, which is one of the main causes of wafer breakage. Using the existing process for metal sputtering on the back of the thin wafer, the breakage rate of the wafer reaches 1%.

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