A kind of sapphire crystal guided mode growth device and growth method

Abstract

The invention relates to a sapphire crystal growing device adopting edge defined film-fed growth techniques and a growing method. The sapphire crystal growing device adopting the edge defined film-fed growth techniques comprises a crystal growing furnace, wherein an outer crucible used for containing an aluminum oxide solution, a hanging plate arranged above an opening of the outer crucible and matched with the opening of the outer crucible and an inner crucible inversely arranged in the outer crucible are arranged in the furnace. According to the growing method for growing the sapphire crystal by using the sapphire crystal growing device adopting the edge defined film-fed growth techniques, mixed drain gas is injected into the inverted inner crucible through a vent pipe, and meanwhile, mixed protective gas is introduced into a thermal field. The sapphire crystal growing device and the growing method have the advantages as follows: the liquid level height of melt in the crucibles can be kept in the crystal growing process, the system cannot be blocked and is free from vibration, meanwhile, the service life of the thermal field made of metals such as Mo / W and the like is effectively prolonged, the loading process is simplified, the upper edge of the mold is far away from the melt, deformation is prevented accordingly, the service life of the mold can be prolonged, and the crystal growing cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of crystal manufacturing, and relates to a sapphire crystal guided mode growth device and a growth method thereof, in particular to a sapphire crystal guided mode growth device and a growth method capable of maintaining the liquid level in a crucible and protected by a protective gas . Background technique [0002] There are many methods for the growth of sapphire crystal materials, mainly including: Kyropolous method (Ky method for short), guided mode method (Edge Defined Film-fed Growth techniques method, EFG method for short), heat exchange method ( That is, Heat Exchange Method (HEM method for short), pulling method (Czochralski method, Cz method for short), Bridgman method (Bridgman method, crucible drop method) and so on. [0003] The raw material of the film guide method is to use the capillary slit on the mold to lift the raw material in the crucible to the top of the mold through capillary phenomen...

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Problems solved by technology

[0005] The above-mentioned mold is directly placed in the crucible, and the drop of the liquid level in the crucible during the process will cause changes in the transportation of raw materials at the top of the mold, thereby affecting the crystallization interface and reducing the quality of the crystal. There are a lot of raw materials, and the leftover raw materials will pollute the new raw materials when they are used again, and it will cause great waste if they are not used. The life of the mold is also reduced due to the leftover raw materials, and the general feeding system, due to the location of the feeding device , the raw material is often softened and viscous before it reaches the target position, or the raw material steam in the crucible prevents the raw material from reaching the target position

At the same time, because the sapphire crystal selected and grown by the conductive film method adopts the graphite insulation system, it will also cause corrosion to thermal field materials such as Mo / W, which greatly reduces the service life of the metal thermal field.

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