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Treatment methods for metal surface defects

A treatment method and technology for metal surfaces, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as reduced productivity, weakened process controllability, and inability to fundamentally remove the risk of scrapping abnormal crystal products. Increased productivity and enhanced controllability

Active Publication Date: 2017-10-24
WUHAN XINXIN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above problems, the present invention provides a treatment method for metal surface defects to solve the problem in the prior art that the abnormal crystals cannot be fundamentally removed and cause a great risk of scrapping the product, and at the same time lead to a decrease in the productivity of the product and the possibility of a process flow. Defects that weaken control

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  • Treatment methods for metal surface defects
  • Treatment methods for metal surface defects
  • Treatment methods for metal surface defects

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Embodiment Construction

[0024] The core idea of ​​the present invention is: by covering a mask layer on the surface of the non-Pad area, and using high-energy positive ions to bombard the defect crystals in the Pad area to form crystal fragments, then remove the mask layer and perform The wet cleaning process is used to completely remove defect crystals, and at the same time, a passivation layer is formed to protect the Pad area.

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0026] In order to completely remove abnormal defect crystals on the surface of the Pad region, improve product productivity, and enhance the controllability of the process flow, the invention provides a method for treating metal surface defects.

[0027] In the embodiment of the present invention, such as figure 1 Shown is a flow chart of the surface treatment of the Pad area in the embodi...

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Abstract

The present invention relates to the technical field of semiconductor manufacturing, and in particular to a method for treating metal surface defects. A mask layer is covered on the surface of the non-Pad area, and high-energy positive ions are used to bombard the defect crystal in the Pad area to make it change. Crystal fragments are formed, and then the mask layer is removed and a wet cleaning process is performed to completely remove defect crystals, and at the same time, a passivation layer is formed to protect the Pad area. The technical solution of the invention can completely remove the defect crystals on the surface of the Pad area, reduce the risk of product scrapping, greatly improve the productivity of the product, and enhance the controllability of the process flow.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for processing metal surface defects. Background technique [0002] With the continuous maturity and development of semiconductor manufacturing technology, wafer manufacturing is more and more widely used in various process environments. At the same time, the requirements for process control of wafer manufacturing are becoming more and more stringent. This leads to a decrease in the yield of the wafer or even a failure of the wafer. [0003] The abnormal growth of fluorine-containing crystals on the surface of the aluminum plate widely exists in the wafer manufacturing process. When the surrounding environment deteriorates or the wafer manufacturing process changes abnormally, the abnormal fluorine-containing crystals are often very easy to grow on the metal surface. , and will directly affect the production yield of the wafer; and as long as the flu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02057
Inventor 刘珩占琼刘天建周永亮
Owner WUHAN XINXIN SEMICON MFG CO LTD