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Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method

A technology of fluorinated graphene and avalanche optoelectronics, which is applied in the field of photoelectric detection, can solve problems affecting device noise, etc., achieve high optical response, improve time response, and eliminate dead layers.

Active Publication Date: 2015-01-21
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

This patented technology describes an optoelectric detector that includes two parts: one part called the detecting element made up from materials like graphite or carbon black covered on top of another piece of metal foil; this other part consists mainly of glasses filled with air between them for better heat dissipation during operation. By applying strong electrical fields within these components, charges may be created due to interaction between different atoms/molecules. These charged particles then travel towards opposite sides when they hit certain surfaces. When there's no charge left behind it, some will stay still while others continue moving around freely until reaching their destination where they release energy again. Overall, this design allows for efficient detection without adding extra steps compared to previous designs.

Problems solved by technology

This patented describes how improving the responsiveness and efficiency of SiP photo diode detection by reducing dark currents caused by quantum effects such as electron scattering at shorter wave lengths. Additionally, introducing graphene into this system helps increase its ability to respond quickly towards infrared lights without losing their effect on low intensity signals like those produced during laser processing.

Method used

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  • Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method
  • Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method
  • Silicon-based avalanche photodetector taking fluorinated graphene as insulating layer and preparation method

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Embodiment 1

[0037] Embodiment 1: the preparation steps of the avalanche photodetector with fluorinated graphene as the insulating layer are as follows:

[0038] (1) On the upper surface of n-type silicon substrate 1, silicon dioxide spacer layer 2 is oxidized and grown, and the resistivity of n-type silicon substrate 1 used is 1~10Ω·cm; The thickness of silicon dioxide spacer layer 2 is 300nm~ 500nm, the growth temperature is 900~1200℃;

[0039] (2) Photoetch the top electrode 5 pattern on the surface of the silicon dioxide isolation layer 2, and then use electron beam evaporation technology to first grow a chromium adhesion layer with a thickness of about 5 nm, and then grow a 50 nm gold electrode;

[0040] (3) On the surface of the silicon dioxide spacer layer 2 grown with the top electrode 5, the silicon dioxide window 3 pattern is photoetched, and then by reactive ion etching technology, using C 4 f 8 Plasma etching the silicon dioxide isolation layer 2 and removing residual silicon...

Embodiment 2

[0047] Embodiment 2: the specific steps of the avalanche photodetector with fluorinated graphene as insulating layer are:

[0048] Steps (1), (2), (3) and (4) are the same as in Example 1.

[0049] (5) preparing and transferring the fluorinated graphene insulating layer 4; the specific steps are as follows:

[0050] (5.1) on the upper surface of top electrode 5, top electrode 5, silicon dioxide spacer 2 and n-type silicon substrate 1 surround the inner surface transfer graphene film 6 of the trapezoidal space that forms; Wherein, transfer graphene film 6 Method is identical with the method for transferring fluorinated graphene insulating layer 4 in embodiment 1 step (5);

[0051] (5.2) The graphene film described in step (5.1) is fluorinated: the sample that transfers the graphene film 6 is put into the vacuum chamber of reactive ion etching system, adopts sulfur hexafluoride (SF 6 ) plasma to fluorinate the surface of the graphene film 6 to form a fluorinated graphene insul...

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Abstract

The invention discloses a silicon-based avalanche photodetector taking fluorinated graphene as an insulating layer and a preparation method. The avalanche photodetector comprises an n-type silicon substrate, a silicon dioxide isolation layer, a silicon dioxide window, a fluorinated graphene insulating layer, a top electrode, a graphene film and a bottom electrode. The fluorinated graphene is a derivative of graphene, and the resistance of the fluorinated graphene can reach over 1Tomega. According to the invention, the photoelectric detector is prepared by taking the fluorinated graphene as an insulating layer, thereby having very low dark current noises; the fluorinated graphene is inserted between graphene and silicon, thereby being capable of reducing impacts imposed on the graphene by the silicon surface state; and photon-generated carriers collide with silicon lattices under an effect of high reverse bias voltage and are ionized, and a very high gain is acquired. The silicon-base avalanche photodetector taking the fluorinated graphene as the insulating layer can carry out wide-spectrum detection, and solves a problem of low response of traditional silicon-based PIN nodes for ultraviolet light detection.

Description

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Claims

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Application Information

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Owner ZHEJIANG UNIV
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