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Level shifter

A level shifter, high-voltage technology, applied in the field of semiconductor storage, can solve the problems of increasing the number of processing steps and masks, adverse effects of the manufacturing process, wasting the effective area of ​​the chip, etc., and achieves low power consumption, good stability, and current small effect

Active Publication Date: 2015-01-28
TIANJIN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Since the use of high-pressure tubes and low-pressure tubes in the same process will increase the number of processing steps and masks, this has a negative impact on the manufacturing process, and it also wastes the effective area of ​​​​the chip

Method used

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  • Level shifter

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Embodiment Construction

[0017] refer to figure 1 , the level shifter includes a first branch and a second branch, and each branch has a signal receiving port. The structure of the level shifter is symmetrical, the selection signals of the first branch and the second branch are complementary, and the output result is also symmetrical.

[0018] Such as figure 1 As shown, the first branch includes M1, M11, M3, M5, M7 and M8, and the second branch includes M2, M12, M4, M6, M9 and M10. Among them: M1, M2, M11 and M12 are PMOS transistors. M3, M5, M7 and M8 and M4, M6, M9 and M10 are NMOS transistors. The sources and substrates of M1 and M2 are connected to the high voltage receiving terminal POSV, the gates of M1 and M2 are respectively connected to the sources of M11 and M12, and the substrates of M11 and M12 are respectively connected to their respective sources, M11 and M12 The gates of M11 and M12 are connected to each other, and the gates of M11 and M12 are the receiving ports of the medium volta...

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Abstract

The invention discloses a lever shifter. The level shifter comprises a first branch circuit and a second branch circuit which are symmetric in structure, wherein selection signals of the first branch circuit and the second branch circuit are complementary, and output results of the first branch circuit and the second branch circuit are also symmetric, the high voltage POSV being 10V, the supply voltage being 1.5V and the reference voltage GND are adopted in receiving signals of the circuit. The circuit also comprises an interface circuit for coupling an output port to an intermediate node during coupling, and separating the output port from the intermediate node under other conditions. Output ports of the first branch circuit and the second branch circuit provide output signals. The current after the lever is shifted to be stabilized is relatively small, the power consumption is relatively low, and the stability is good, the level shifting task can be accurately completed within required time, the level shifter is suitable for a nonvolatile memory, is verified to be qualified through a tape-out.

Description

technical field [0001] The invention relates to the technical field of semiconductor storage, in particular, to a level shifter for generating high voltage in a nonvolatile memory. Background technique [0002] A type of non-volatile memory is memory that retains data when power is not active. Specifically, information is retained in nonvolatile memory even when power is turned off. Such nonvolatile registers require different voltages for program, erase, read, and verify operations. In the non-volatile memory, the charge pump generates different voltages, but these voltages need to go through a level shifter combined with a row and column decoding system to be suitable for non-volatile memory cells. [0003] For this purpose, the level shifter is adapted to convert the logic signal from the selector to the high voltage required during programming and erasing operations. For example. During erasing, a level shifter is required to convert the power supply voltage used to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06
Inventor 李建成王震李聪尚靖李文晓郑黎明曾祥华吴建飞李松亭
Owner TIANJIN INST OF ADVANCED TECH