Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer

A patterned substrate and epitaxial wafer technology, applied in the field of epitaxial wafers, can solve the problems of low light reflectivity and achieve the effects of increasing light reflectivity, improving light extraction efficiency, and improving light extraction efficiency

Active Publication Date: 2015-02-04
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem in the prior art that light is easily transmitted on the interface of the sapphire substrate and the reflectivity of light i

Method used

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  • Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer
  • Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer
  • Patterned substrate and preparation method thereof, epitaxial-wafer preparation method and epitaxial wafer

Examples

Experimental program
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Example Embodiment

[0041] Example one

[0042] The embodiment of the present invention provides a method for preparing a patterned substrate, see figure 1 , The method includes:

[0043] Step 101: Deposit a silicon dioxide layer on a sapphire substrate.

[0044] In this embodiment, depositing a silicon dioxide layer on a sapphire substrate includes:

[0045] A plasma-enhanced chemical vapor deposition method or a sol-gel method is used to deposit a silicon dioxide layer on the sapphire substrate.

[0046] Such as figure 2 As shown, a silicon dioxide layer 12 is deposited on the sapphire substrate 11.

[0047] Step 102: Use a photoresist mask and an etching process to etch the silicon dioxide layer until a part of the sapphire substrate is exposed to form a plurality of protrusions. The protrusions have a mesa structure and a photoresist mask is left on the top surface of the protrusions. membrane.

[0048] Specifically, the protrusion may be one or more of a truncated cone structure, an elliptical cone st...

Example Embodiment

[0065] Example two

[0066] The embodiment of the present invention provides a method for manufacturing an epitaxial wafer, see Figure 7 , The method includes:

[0067] Step 201: Prepare a patterned substrate according to the method in the first embodiment.

[0068] Step 202: sequentially growing an n-type gallium nitride layer, a multiple quantum well layer and a p-type gallium nitride layer on the patterned substrate to form an epitaxial wafer.

[0069] Specifically, the side epitaxial growth method is used to sequentially grow an n-type gallium nitride layer, a multiple quantum well layer, and a p-type gallium nitride layer on a patterned substrate to form an epitaxial wafer.

[0070] In the embodiment of the present invention, a silicon dioxide layer is deposited on a sapphire substrate, a plurality of protrusions are etched using a photoresist mask and an etching process, and an aluminum nitride layer is sputtered on the surface of the sapphire substrate. The protrusions are remo...

Example Embodiment

[0071] Example three

[0072] The embodiment of the present invention provides a patterned substrate, see Figure 8 , The substrate includes:

[0073] A sapphire substrate 301 and an aluminum nitride layer 302 disposed on the sapphire substrate 301. A plurality of hollow structures 302a are provided in the aluminum nitride layer 302, and the hollow structures 302a are mesa structures.

[0074] Specifically, the hollow structure 302a may be one or more of a truncated cone structure, an elliptical cone structure, and a prism cone structure.

[0075] Further, the radius or width of the top surface of the hollow structure 302a is 0.05-0.5um, the radius or width of the bottom surface of the hollow structure 302a is 0.5-10um, and the height of the hollow structure 302a is 0.5-5um. The hollow structure of this size has an obvious effect on reflectivity and can maximize the efficiency of LED light.

[0076] In this embodiment, a plurality of hollow structures 302a are arranged in a matrix to f...

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Abstract

The invention discloses a patterned substrate and a preparation method thereof, an epitaxial-wafer preparation method and an epitaxial wafer and belongs to the field of light emitting diode. The method includes the following steps: depositing a silicon dioxide layer on a sapphire substrate; adopting a photoresist mask and an etching technology to etch the silicon dioxide layer until part of the sapphire substrate is exposed so that a plurality of protrusions are formed; arranging protrusion surface sputtering aluminum nitride layers on the sapphire substrate; removing the photoresist mask on the top surfaces of the protrusions and the aluminum nitride formed on the photoresist mask through sputtering; and adopting a wet etching method to remove the protrusions. When a gallium nitride layer is grown on the patterned substrate, hollow structures become air gaps. The refractive index of the gallium nitride material is 2.5 and the refractive index of the aluminum nitride material is 2.0. The air is a material with the lowest refractive index so that light is not easy to be transmitted, but easier to be reflected at the boundaries of the gallium nitride , the aluminum nitride and the air sapphire substrate and thus a higher reflectivity can be generated so that the light extraction efficiency of the light emitting diode is improved.

Description

Technical field [0001] The present invention relates to the field of light emitting diodes (Light Emitting Diode, "LED" for short), in particular to a patterned substrate and a preparation method thereof, an epitaxial wafer production method and an epitaxial wafer. Background technique [0002] The patterned sapphire substrate (Patterned Sapphire Substrate, "PSS") technology is currently a relatively mature technical solution in the field of growth of gallium nitride materials on heterogeneous substrates. Among them, the use of PSS technology can better relieve the stress in the sapphire substrate and gallium nitride epitaxial growth, reduce the defect density in the gallium nitride epitaxy, and improve the crystal quality of the epitaxial material. [0003] In the process of implementing the present invention, the inventor found that the prior art has at least the following problems: [0004] When light enters the patterned sapphire substrate from the active layer, since the differ...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/00H01L21/02
CPCH01L33/0066H01L33/0075H01L33/22
Inventor 桂宇畅张建宝
Owner HC SEMITEK CORP
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