Novel dibenzo[g,p]1,2-benzophenanthrene derivative as well as preparation method and application

Abstract

The invention discloses a novel dibenzo[g,p]1,2-benzophenanthrene derivative. A structure of the derivative is shown in a formula in the specification, wherein in the formula, R is substituted benzene ring, thiophene, substituted thiophene, bithiophene, substituted bithiophene, 3,4-ethylenedioxythiophene, substituted 3,4-ethylenedioxythiophene, aryl substituted vinyl and other aromatic system units. The molecule has better migration rate, is an organic semiconductor material with good properties and stability and can be applied to photovoltaic devices, such as OTFT (organic thin-film transistor), OPV (organic photovoltaic), OLED (organic light-emitting diode), etc. The invention also discloses a synthetic method of the novel dibenzo[g,p]1,2-benzophenanthrene derivative. The synthetic method comprises the steps that firstly diphenylmethane reacts with 4-bromophenylbenzophenone through hydrogen abstraction of n-butyllithium and the reactant is further dehydrated under the condition of using p-toluenesulfonic acid as a catalyst to obtain 1-(4-bromophenyl)-1,2,2-triphenylethylene; 1-(4-bromophenyl)-1,2,2-triphenylethylene reacts with [bis(trifluoroacetoxy)iodo]benzene in the presence of methanesulfonic acid to obtain 2-bromodibenzo[g,p]1,2-benzophenanthrene; 2-bromodibenzo[g,p]1,2-benzophenanthrene and various boronic acid pinacol esters are subjected to suzuki coupling to obtain the target product, namely the dibenzo[g,p]1,2-benzophenanthrene derivative.

Description

technical field [0001] The invention belongs to the technical fields of organic thin film transistors (abbreviated as OTFT), OLED, OPV and other materials, and specifically relates to a novel dibenzo[g, p]condensed dinaphthalene derivative, its preparation method and application. Background technique [0002] Organic semiconductor materials are the core part of organic semiconductor devices such as OTFT, OLED and OPV. The level and stability of its performance directly affect the performance and life of the device. For the materials in OTFT, n-type semiconductor, p-type semiconductor and bipolar semiconductor can be divided according to the difference of transport carriers. N-type semiconductors use electrons to transport electrons, which are very unstable in air. The carriers transported by p-type semiconductors are holes. At present, most of the organic semiconductors with excellent performance are mainly studied on p-type. According to the material, it can be divided i...

AI Technical Summary

Problems solved by technology

At present, for small molecule field effect materials, there are some main problems: (1) the stability of field effect transistors needs to be improved; (2) high-performance n-type small molecule field effect materials, especially air stable high performance N-type small-molecule field-effect materials are still relatively scarce; (3) There are not many methods for preparing field-effect transistors by large-area and solution methods; (4) Noble metal electrodes need low-cost, stable performance substitutes, etc.

[0003] OTFT has great advantages over amorphous silicon transistors in terms of manufacturing cost and preparation conditions, which makes the prospect of OTFT industrialization more broad, but there are still many problems to be solved. For example, the existing theory about semiconductor energy bands is established On the basis of inorganic materials, it is impossible to give a reasonable explanation for some phenomena in OTFT; the type of organic semiconductor materials is too single, which also limits the further development of organic transistors

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