A method of manufacturing embedded flash memory
An embedded and flash memory technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as complex manufacturing process, and achieve the effect of improving performance
Active Publication Date: 2017-08-01
SEMICON MFG NORTH CHINA (BEIJING) CORP +1
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Problems solved by technology
However, the traditional solution will cause new process problems, easily introduce other impurities, and complicate the manufacturing process
Method used
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[0028] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0029] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to explain how the present invention uses a surface treatment process to deposit two layers of photoresist to solve the problem of depletion of the control gate in the flash cell area. Apparently, the preferred embodiments of the present invention are described in detail as follows, however, the present invention may also have other implementations apart from these detailed descriptions.
[0030] It should be noted that the terms used he...
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The invention discloses a manufacturing method of an embedded flash memory, comprising: providing a semiconductor substrate, the semiconductor substrate has a flash memory unit area and a logic circuit area; depositing a gate material layer on the semiconductor substrate; Forming a bottom anti-reflection layer and a first photoresist layer on the gate material layer; removing the first photoresist layer located in the logic circuit area; processing the first photoresist layer located in the flash memory cell area glue layer and the bottom anti-reflection coating located in the logic circuit region, to form a barrier layer on the surface of the first photoresist layer and the bottom anti-reflection layer; forming a second layer on the barrier layer Two photoresist layers. According to the method for making embedded flash memory proposed by the present invention, the damage to the control gate in the flash memory cell area during the process of forming the logic gate loop is avoided, and the overall performance of the embedded flash memory and the performance of the embedded flash memory are improved. Yield rate.
Description
technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing an embedded flash memory. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have led to more and more high-density various Types of memory, such as RAM (random access memory), SRAM (static random access memory), DRAM (dynamic random access memory) and FRAM (ferroelectric memory), etc. [0003] Random access memory, such as DRAM and SRAM, has the problem of data loss after power failure during use. To overcome this problem, various nonvolatile memories have been designed and developed. Recently, flash memory based on the floating gate concept has become the most versatile non-volatile memory due to its small cell size and good performance. [...
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IPC IPC(8): H01L27/11531H01L27/11521H01L21/312H10B41/42H10B41/30
CPCH01L29/40114H10B41/00
Inventor 王新鹏王琪潘晶李天慧
Owner SEMICON MFG NORTH CHINA (BEIJING) CORP