Unlock instant, AI-driven research and patent intelligence for your innovation.

MEMS component double-face opposite-communicating dielectric isolation structure and preparation method

A medium isolation and device technology, which is applied in the field of double-sided through-pass dielectric isolation structure and preparation, can solve the problems of device introduction stress and low process reliability, and achieves improved reliability, consistency and reliability, and simple structure. Effect

Active Publication Date: 2015-02-18
EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE
View PDF9 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the problems that currently prepared wafers with isolation structures are relatively thin, have low processing reliability, and easily introduce stress to devices when assembling thin wafers with isolation structures, and provide a processing reliability High, low-stress wafer isolation structure introduced to the device, using MEMS bulk silicon technology, simple processing technology, good consistency, and low-cost mass production can be realized

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS component double-face opposite-communicating dielectric isolation structure and preparation method
  • MEMS component double-face opposite-communicating dielectric isolation structure and preparation method
  • MEMS component double-face opposite-communicating dielectric isolation structure and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The structure and manufacturing process of the present invention will be further described below in conjunction with the accompanying drawings.

[0027] (1) Wafer isolation structure

[0028] refer to figure 1 , figure 2 , image 3 The present invention includes: a silicon base 1 , an insulating layer 2 , a deep groove filling 3 , an isolation electrode 4 , a movable structure 5 , a pad point 6 , a metal adhesive gold (Au) 7 , and a cap 8 .

[0029] The silicon substrate 1 is separated by the insulating layer 2 and the deep groove filling to form the isolation electrode 4, the movable structure 5 is located on the isolation electrode 4, the pad point 6 is bonded below the isolation electrode 4, and the metal adhesive gold (Au) 7 is used as an adhesive medium to carry out wafer-level bonding packaging on the cap 8 .

[0030] (2) MEMS device manufacturing process based on wafer isolation structure

[0031] Figure 4(a)-(f) is the fabrication of the wafer isolatio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a MEMS component double-face opposite-communicating dielectric isolation structure and a preparation method. The structure comprises a silicon substrate (1), a movable structure (5) and a nut cap (8), wherein the movable structure (5) and the nut cap (8) are connected through metal adhesive (7); silicon-silicon bonding is performed between the movable structure (5) and the silicon substrate (1); the structure is characterized in that opposite-communicating insulating deep grooves are formed in the silicon substrate (1); filling materials including silicon dioxide, silicon nitride or polycrystalline silicon (3) are arranged in the insulating deep grooves; the silicon substrate (1) between the insulating deep grooves forms an isolating electrode (4); the upper surface of the isolating electrode (4) is matched with the movable structure (5) in a corresponding manner.

Description

technical field [0001] The invention belongs to the technical field of micromechanical electronics. Specifically, it is a double-sided communication dielectric isolation structure and a preparation method. Background technique [0002] Micro Electro Mechanical System (MEMS) is a microsystem that integrates micromechanical components, microsensors, microactuators, signal processing and control circuits. Many MEMS devices, such as gyroscopes and acceleration sensors, have high requirements for vacuum, thermal stress matching, and chip area. Maintaining the vacuum of the cavity package for a long time can ensure that the damping of the gas is always kept at a controllable level when the mechanical moving parts move. Within the range, thereby improving the life of MEMS devices; better thermal stress matching after wafer bonding can greatly reduce the impact of thermal stress on device performance; device miniaturization is also the development trend of MEMS. [0003] In order ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81C1/00B81C3/00
Inventor 王鹏郭群英黄斌王文婧何凯旋陈博陈璞刘磊
Owner EAST CHINA INST OF OPTOELECTRONICS INTEGRATEDDEVICE