A double-sided heat dissipation quantum cascade laser device structure
A quantum cascade and double-sided heat dissipation technology, which is applied to laser components, lasers, phonon exciters, etc., can solve the problems of limiting the heat dissipation efficiency of the device and ignoring the heat dissipation of the device substrate, so as to achieve power improvement, temperature reduction, and heat dissipation. The effect of improving efficiency
Active Publication Date: 2017-07-14
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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The above methods are all carried out from the perspective of improving the heat dissipation of the device in the lateral direction and the direction of the epitaxial surface, while ignoring the heat dissipation in the direction of the device substrate, thus limiting the further improvement of the heat dissipation efficiency of the device
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[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0023] figure 1 A schematic cross-sectional view of the double-sided heat dissipation quantum cascade laser device structure in the direction parallel to the optical cavity plane of the present invention is given. Such as figure 1 As shown, its devices include:
[0024] a substrate 105;
[0025] An active region 104 uniformly grown on the upper surface of the substrate 105;
[0026] an upper waveguide 103 uniformly grown on the upper surface of the active region 104;
[0027] A front metal electrode layer 102 uniformly grown on the upper surface of the upper waveguide 103;
[0028] A heat sink 101, which is metal-bonded with the upper waveguide layer 103 of the device through the front electrode layer 102;
[0029] ...
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The invention discloses a double-sided heat dissipation quantum cascade laser device structure, comprising: a substrate; an active region uniformly grown on the upper surface of the substrate; an upper waveguide uniformly grown on the upper surface of the active region; A metal electrode layer, which is uniformly grown on the upper surface of the upper waveguide; a heat sink, which is bonded to the upper waveguide layer of the device through the front metal electrode layer; an insulating layer, which is evenly covered on both sides of the ridge waveguide of the semiconductor laser, And the ridge surface of the ridge waveguide has an electric injection window; the back metal electrode layer, which is uniformly grown on the outer surface of the insulating layer, is used as the back electrode of the laser; the electroplated metal layer is distributed on both sides of the ridge waveguide, and is connected with the back metal The electrode layer realizes electrical isolation and serves as the front electrode of the laser; the patterned wiring heat sink is respectively connected to the back metal electrode layer and the electroplating metal layer through the solder layer.
Description
technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a high-power quantum cascade laser device structure and a design method thereof, and more specifically, a method for improving heat dissipation of a high-power quantum cascade laser by using double-sided heat dissipation technology. Background technique [0002] Quantum cascade laser (QCL) is a unipolar device based on resonant flier-through and sub-band transition of electrons in multiple quantum wells. It is a high-quality mid-infrared light source with a wavelength covering 3-24um. [0003] Since QCL was born in 1994, after 20 years of development, by continuously improving the design of the active area and improving the packaging method of the device, it has achieved a single-tube room temperature continuous 5.1W and a conversion efficiency of 21% [Y.Bai, et al , Aplied Physics Letters 98, 181102 (2011)], single-tube pulse work 120W, conversion ef...
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IPC IPC(8): H01S5/024
Inventor 闫方亮张锦川刘峰奇卓宁刘俊岐王利军王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI