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Parallel circuit of MOSFET

A technology of parallel connection and circuit, applied in the direction of electrical components, electronic switches, pulse technology, etc., can solve the problems of MOSFET aging, damage, large PCB layout, etc., and achieve the effects of heating balance, slowing down the driving speed, and strong anti-interference ability

Active Publication Date: 2015-03-04
DALIAN SHINERGY SCI & TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, parallel circuits based on multiple MOSFETs are mostly packaged in SMD. The parallel circuit of MOSFETs is welded on the aluminum substrate, which is helpful for MOSFET heat dissipation and thermal balance. However, when multiple MOSFETs are connected in parallel, the PCB layout of MOSFETs will be affected due to the long drive line Relatively large, take the aluminum substrate of a low-voltage servo drive with 9 MOSFETs connected in parallel as an example. When 9 MOSFETs of a single bridge arm are connected in parallel, the distance between the two farthest MOSFETs is about 150mm. Such a long drive line will cause the parallel MOSFET The circuit has the problem of inconsistent driving and opening, and its driving and opening are also susceptible to interference
When the above problems are serious, the driving current of each parallel MOSFET will be inconsistent, resulting in serious aging or direct damage of individual MOSFETs.

Method used

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  • Parallel circuit of MOSFET

Examples

Experimental program
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Effect test

Embodiment 1

[0011] like figure 1 As shown, a MOSFET parallel circuit includes a group of parallel MOSFETs, and the number of MOSFETs is 9, which are respectively between the gate and source of the third MOSFET, the sixth MOSFET, and the ninth MOSFET. Capacitors C3, C6, and C9 are connected in series, and the capacitance value of each capacitor is 100pF. The above three capacitors are connected in parallel, and the gates of the nine MOSFETs are all connected in series with a resistor.

[0012] In this embodiment, capacitors are evenly connected in series in parallel MOSFET circuits as driving buffer capacitors, and the capacitance values ​​of each capacitor are the same, that is, three adjacent MOSFETs are used as a region to share a driving buffer capacitor, and the entire MOSFET parallel circuit, Three equal-value driving buffer capacitors are used, that is, the MOSFET connected in series with capacitor C6 is separated from the two adjacent MOSFETs connected in series with capacitor C3 a...

Embodiment 2

[0014] like figure 1 As shown, a MOSFET parallel circuit includes a group of parallel MOSFETs, and the number of MOSFETs is 9, which are respectively between the gate and source of the third MOSFET, the sixth MOSFET, and the ninth MOSFET. Capacitors C3, C6, and C9 are connected in series, and the capacitance value of each capacitor is 500pF. The above three capacitors are connected in parallel, and the gates of the nine MOSFETs are all connected in series with a resistor.

[0015] In this embodiment, capacitors are evenly connected in series in parallel MOSFET circuits as driving buffer capacitors, and the capacitance values ​​of each capacitor are the same, that is, three adjacent MOSFETs are used as a region to share a driving buffer capacitor, and the entire MOSFET parallel circuit, Three equal-value driving buffer capacitors are used, that is, the MOSFET connected in series with capacitor C6 is separated from the two adjacent MOSFETs connected in series with capacitor C3 a...

Embodiment 3

[0017] like figure 1 As shown, a MOSFET parallel circuit includes a group of parallel MOSFETs, and the number of MOSFETs is 9, which are respectively between the gate and source of the third MOSFET, the sixth MOSFET, and the ninth MOSFET. Capacitors C3, C6, and C9 are connected in series, and the capacitance value of each capacitor is 1uF. The above three capacitors are connected in parallel, and the gates of the nine MOSFETs are all connected in series with a resistor.

[0018] In this embodiment, capacitors are evenly connected in series in parallel MOSFET circuits as driving buffer capacitors, and the capacitance values ​​of each capacitor are the same, that is, three adjacent MOSFETs are used as a region to share a driving buffer capacitor, and the entire MOSFET parallel circuit, Three equal-value driving buffer capacitors are used, that is, the MOSFET connected in series with capacitor C6 is separated from the two adjacent MOSFETs connected in series with capacitor C3 and...

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Abstract

The invention provides a parallel circuit of MOSFET. The parallel circuit of MOSFET comprises a group of paralleled MOSFET, a capacitor is in series connection between the grid electrode and the source electrode of at least one MOSFET, the capacitance value of the capacitor ranges from 1000 pF to 1 uF, capacitors are in series connection between the grid electrodes and source electrodes of a plurality of MOSFET to form a parallel connection. The parallel circuit of MOSFET can ensure the consistency of drive turn-on, and further increase the anti-interference performance of circuit.

Description

technical field [0001] The invention relates to a driving circuit, in particular to a MOSFET parallel circuit. Background technique [0002] At present, parallel circuits based on multiple MOSFETs are mostly packaged in SMD. The parallel circuit of MOSFETs is welded on the aluminum substrate, which is helpful for MOSFET heat dissipation and thermal balance. However, when multiple MOSFETs are connected in parallel, the PCB layout of MOSFETs will be affected due to the long drive line Relatively large, take the aluminum substrate of a low-voltage servo drive with 9 MOSFETs connected in parallel as an example. When 9 MOSFETs of a single bridge arm are connected in parallel, the distance between the two farthest MOSFETs is about 150mm. Such a long drive line will cause the parallel MOSFET The circuit has the problem of inconsistent driving and opening, and its driving and opening are also susceptible to interference. When the above-mentioned problems are serious, the driving cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03K17/16
Inventor 许浩孔庆刚宋中奇吴志敢
Owner DALIAN SHINERGY SCI & TECH DEV
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