Unlock instant, AI-driven research and patent intelligence for your innovation.

A horizontal diffusion furnace with an inlet quartz gun

A technology of quartz gun and diffusion furnace, which is applied in the direction of diffusion/doping, electrical components, crystal growth, etc. It can solve the problems of production efficiency impact, increase equipment maintenance cost, and narrow gas column, so as to reduce the frequency of disassembly and improve equipment Utilization rate and effect of extending service life

Active Publication Date: 2017-08-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] There are obvious defects in the air intake structure and the method adopted by the gas transmission system of the above-mentioned existing semiconductor horizontal diffusion furnace: since the nozzle for injecting the process gas is located at the end face of the quartz gun 3, and there is only one nozzle, therefore, from the nozzle The flow rate and velocity of the injected process gas are relatively large, and the gas column formed by the gas flow is also narrow (please refer to the effect of the range of the gas column formed by the curved arrow at the nozzle in the figure)
This will have a certain impact on production efficiency, and the quartz gun is very brittle, and it is easy to cause damage to the matching part of the ball bowl and the ball head during disassembly. The residue of the sealing gasket at the place needs to be cleaned time-consumingly, which will further affect the production efficiency
[0008] The above problems will directly affect the uniformity of the diffusion process, the effect of the process, and bring adverse consequences to production efficiency and maintenance costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A horizontal diffusion furnace with an inlet quartz gun
  • A horizontal diffusion furnace with an inlet quartz gun
  • A horizontal diffusion furnace with an inlet quartz gun

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0027] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly represent the structure of the present invention and facilitate the description, the structures in the accompanying drawings are not drawn according to the general scale, and the Partial enlargement, deformation and simplification of processing are shown, therefore, it should be avoided to interpret this as a limitation of the present invention.

[0028] see figure 2 , figure 2 It is a schematic diagram of the arrangement and working state of the inlet quartz gun of the present invention in the process tube of the horizontal diffusion furnace. like figure 2 As shown, the gas inlet quartz gun 3 for a diffusion furnace of the present invention is used in combination with f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an air intake silica gun for a horizontal diffusion furnace used for injecting process gas. The silica gun is a hollow silica gun tube, the opening end of the silica gun is mechanically and hermetically connected with an air inlet pipe of the diffusion furnace used for injecting the process gas through a cooperation way of a ball head and a ball bowl with mirror polishing cooperation surfaces, and a plurality of air outlet nozzles are formed in the side wall of the silica gun nearby a closing end; each group of air outlet nozzles comprises a plurality of nozzles, the process gas can be injected uniformly and radially in all nozzles after entering the silica gun through the air inlet pipe, and cover the surfaces of all silicon pieces obliquely below an exhaust port under the suction and guiding effects of the exhaust port, therefore, the leakage of the process gas can be effectively prevented, the uniformity of a diffusion technology can be improved, the influence of fluctuation on the process temperature can be reduced, and the rate of equipment utilization can be improved.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, and more particularly, to a horizontal diffusion furnace containing an air-intake quartz gun. Background technique [0002] With the development of the semiconductor integrated circuit manufacturing process, the feature size is continuously reduced, which makes the integration of the chip higher and higher, which puts forward higher requirements for the integrated circuit manufacturing and process equipment. The latest process development is more and more affected by the process equipment. Constraints. [0003] Semiconductor diffusion equipment is an important process equipment for integrated circuit manufacturing. As an automatic control equipment that requires continuous work for a long time, and has excellent temperature control accuracy, good reliability and stability, it is used in the integrated circuit manufacturing process. Various oxidation, annealing and thin film growth ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67
CPCC30B31/16H01L21/67155
Inventor 郝晓明桂晓波
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD